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參數(shù)資料
| 型號(hào)： | CY7C1011CV33-15BVI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 128K x 16 Static RAM |
| 中文描述： | 128K X 16 STANDARD SRAM, 15 ns, PBGA48 |
| 封裝： | 6 X 8 MM, 1 MM HEIGHT, VFBGA-48 |
| 文件頁(yè)數(shù)： | 8/11頁(yè) |
| 文件大?。?/td> | 284K |
| 代理商： | CY7C1011CV33-15BVI |
CY7C1011CV33
Document #: 38-05232 Rev. *C
Page 6 of 11
Read Cycle No. 2 (OE Controlled)[11, 12]
Write Cycle No. 1 (CE Controlled)[13, 14]
Notes:
12. Address valid prior to or coincident with CE transition LOW.
13. Data I/O is high-impedance if OE or BHE and/or BLE = VIH.
14. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
Switching Waveforms (continued)
50%
DATA VALID
tRC
tACE
tDOE
tLZOE
tLZCE
tPU
HIGH IMPEDANCE
tHZOE
tHZBE
tPD
HIGH
OE
CE
ICC
ISB
IMPEDANCE
ADDRESS
DATA OUT
VCC
SUPPLY
tDBE
tLZBE
tHZCE
BHE, BLE
CURRENT
ICC
ISB
tHD
tSD
tSCE
tSA
tHA
tAW
tPWE
tWC
BW
DATAI/O
ADDRESS
CE
WE
BHE, BLE
t
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1011CV33-15ZC | 128K x 16 Static RAM |
| CY7C1011CV33-15ZI | 128K x 16 Static RAM |
| CY7C106B-12VC | 256K x 4 Static RAM |
| CY7C106B-15VC | 256K x 4 Static RAM |
| CY7C106B-15VI | 256K x 4 Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1011CV33-15BVIT | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| CY7C1011CV33-15Z | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1011CV33-15ZC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1011CV33-15ZI | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3.3V 2M-Bit 128K x 16 15ns 44-Pin TSOP-II |
| CY7C1011CV33-15ZXC | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3.3V 2M-Bit 128K x 16 15ns 44-Pin TSOP-II |
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