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參數(shù)資料
| 型號(hào)： | CXK5T81000ATN-10LLX |
| 元件分類： | SRAM |
| 英文描述： | 128K X 8 STANDARD SRAM, 100 ns, PDSO32 |
| 封裝： | 8 X 13.40 MM, PLASTIC, TSOP-32 |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 169K |
| 代理商： | CXK5T81000ATN-10LLX |
– 8 –
CXK5T81000ATN/AYN
Write cycle (3) :
CE2 control
Address
OE
t
WC
t
AW
Data valid
t
CW
t
WR1
t
WP
t
DW
t
DH
High impedance
CE1
WE
Data out
Data in
t
AS
t
CW
CE2
(
3
)
1
Write is executed when both CE1 and WE are at low and CE2 is at high simultaneously.
2
Do not apply the data input voltage of the opposite phase to the output while I/O pin is in output condition.
3
t
WR1
is tested from either the rising edge of CE1 or the falling edge of CE2, whichever comes earlier, until
the end of the write cycle.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CXK5T81000ATN-12LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word X 8-bit High Speed CMOS Static RAM |
| CXK5T81000AYM | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word x 8-bit High Speed CMOS Static RAM |
| CXK5T81000AYM-10LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word x 8-bit High Speed CMOS Static RAM |
| CXK5T81000AYM-12LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word x 8-bit High Speed CMOS Static RAM |
| CXK5T81000AYN | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word X 8-bit High Speed CMOS Static RAM |
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