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參數(shù)資料
| 型號： | CT30SM12 |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 30A I(C) | TO-247VAR |
| 中文描述： | 晶體管| IGBT的|正陳| 600V的五（巴西）國際消費電子展| 30A條一（c）|至247VAR |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 61K |
| 代理商： | CT30SM12 |
Feb.1999
V
(BR) CES
I
GES
I
CES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
d (on)
t
r
t
d (off)
t
f
R
th (j-c)
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30SM-12
GENERAL INVERTER UPS USE
600
—
—
4.5
—
—
—
—
—
—
—
—
—
V
μ
A
mA
V
V
pF
pF
pF
ns
ns
ns
ns
°
C/W
—
—
—
6.0
2.5
1480
180
54
30
135
135
250
—
—
±
0.5
1
7.5
3.0
—
—
—
—
—
—
—
0.50
I
C
= 1mA, V
GE
= 0V
V
GE
=
±
30V, V
CE
= 0V
V
CE
= 600V, V
GE
= 0V
I
C
= 3.0mA, V
CE
= 10V
I
C
= 30A, V
GE
= 15V
V
CE
= 25V, V
GE
= 0V, f = 1MHz
V
CC
= 300V, Resistance load,
I
C
= 30A, V
GE
= 15V, R
GE
= 20
Junction to case
0
2
4
6
8
10
0
4
8
12
16
20
I
C
= 60A
10A
30A
T
j
= 25°C
0
10
20
30
40
50
0
2
4
6
8
10
T
j
= 25°C
V
GE
= 20V15V
12V
10V
11V
8V
9V
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
C
C
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
C
S
C
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C)
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Thermal resistance
PERFORMANCE CURVES
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CT30SM-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:GENERAL INVERTER . UPS USE |
| CT30TM8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 400V V(BR)CES | 180A I(C) | SOT-186 |
| CT30TM-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:STROBE FLASHER USE |
| CT30VM8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 400V V(BR)CES | 180A I(C) | TO-221 |
| CT30VM-8 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR |
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