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參數(shù)資料
| 型號： | CSD600K |
| 廠商： | Continental Device India Limited |
| 英文描述： | PNP PLASTIC POWER TRANSISTORS |
| 中文描述： | 進(jìn)步黨塑料功率晶體管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 125K |
| 代理商： | CSD600K |
Continental Device India Limited
Data Sheet
Page 2 of 3
631
600
631K
600K
Emitter-base voltage (open collector)
Collector current
Collector current (peak)
Total power dissipation up to T
A
= 25°C
Total power dissipation up to T
C
= 25°C
Junction temperature
Storage temperature
V
EBO
I
C
I
CP
P
C
P
C
T
j
T
stg
max.
max.
max.
max.
max.
max.
–65 to +150
5.0
1.0
2.0
1.0
8.0
150
V
A
mA
W
W
oC
oC
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
631
600
631K
600K
Collector cutoff current
I
E
= 0; V
CB
= 50 V
Emitter cut-off current
I
C
= 0; V
EB
= 4 V
Breakdown voltages
I
C
= 1 mA; I
B
= 0
I
C
= 10 μA; I
E
= 0
I
E
= 10 μA; I
C
= 0
Saturation voltages
I
C
= 500 mA; I
B
= 50 mA
I
CBO
max.
1.0
μA
I
EBO
max.
1.0
μA
V
CEO
V
CBO
V
EBO
min.
min.
min.
100
100
120 V
120 V
5.0
V
V
CEsat
V
BEsat
max.
max.
0.4
1.2
V
V
D.C. current gain
I
C
= 50 mA; V
CE
= 5 V
h
FE
*
min.
max.
60
320
I
C
= 500 mA; V
CE
= 5 V
Transition frequency
I
C
= 50 mA; V
CE
= 10 V
h
FE
min.
20
PNP
NPN
f
T
typ.
typ.
110
130
MHz
MHz
Output capacitance
V
CB
= 10 V; I
E
= 0; f = 1 MHz
PNP
NPN
C
ob
C
ob
typ.
typ.
30
20
pF
pF
*h
FE
classification: D60 - 120, E = 100 - 200, F 160 - 320
CSB631, CSB631K
CSD600, CSD600K
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