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參數(shù)資料
| 型號： | CSB772R |
| 廠商： | Continental Device India Limited |
| 英文描述： | Audio Frequency Power Amplifier and Low Speed Switching |
| 中文描述： | 聲頻功率放大器和低速開關 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 136K |
| 代理商： | CSB772R |
PNP PLASTIC POWER TRANSISTOR
CSB772
TO126
Plastic Package
Complementary CSD882
Audio Frequency Power Amplifier and Low Speed Switching
ABSOLUTE MAXIMUM RATINGS(Ta=25oC unless specified otherwise)
DESCRIPTION
Collector Base Voltage(open emitter)
Collector Emitter Voltage (open base)
Emitter Base Voltage(open collector)
Collector Current (DC)
Collector Current (Pulse) (1)
Base Current (DC)
Total Power Dissipation@ Tc=25oC
Total Power Dissipation@ Ta=25oC
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
C
I
B
P
tot
P
tot
T
j
T
stg
VALUE
>40
>30
>5.0
<3.0
<7
<0.6
<10
<1.0
<150
-65 to +150
UNIT
V
V
V
A
A
A
W
W
o
C
o
C
ELECTRICAL CHARACTERISTICS (Ta=25oC unless specified otherwise)
DESCRIPTION
Collector-Cut off Current
SYMBOL TEST CONDITION
I
CBO
I
E
=0, V
CB
=30V
MIN
TYP
MAX
1.0
UNIT
μ
A
Emitter cut off Current
I
EBO
V
EB
=3V, I
C
=0
1.0
μ
A
Breakdown Voltages
V
CEO
V
CBO
V
EBO
V
CE
(sat)* I
C
=2A, I
B
=0.2A
V
BE
(sat)*
IC=2A, IB=0.2A
I
C
=1mA, I
B
=0
I
C
=1mA, I
E
=0
I
C
=0, I
E
=1mA
30
40
5
V
V
V
V
V
Saturation Voltages
0.5
2.0
DC Current Gain
h
FE
*
h
FE
*
I
C
=20mA,V
CE
=2V
I
C
=1.0A,V
CE
=2V**
30
60
400
Output Capacitance at f=1MHz
C
O
I
E
=0, V
CB
=10V
55
pF
Transition Frequency
* Pulse test : pulse width < 350
μ
s, Duty cycle < 2%
(1) PW = 10ms, Duty Cycle < 50%
**h
FE
classification : R :60-120 Q :100-200 P: 160-320 E: 200-400
f
T
I
C
=0.1A, V
CE
=5V
80
MHz
B
C
E
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
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