參數(shù)資料
型號: CRS09
廠商: Toshiba Corporation
英文描述: Zener Diode; Application: General; Pd (mW): 200; Vz (V): 8.02 to 8.36; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
中文描述: 開關(guān)電源的應(yīng)用
文件頁數(shù): 3/5頁
文件大?。?/td> 189K
代理商: CRS09
CRS09
2006-11-13
3
10
1
100
1000
1
10
100
1000
10000
100000
10000
Device mounted on a ceramic board:
Soldering land: 2 mm
×
2 mm
Device mounted on a glass-epoxy board:
Soldering land: 6 mm
×
6 mm
30000
Instantaneous forward voltage vF (V)
i
F
– v
F
I
F
Average forward current IF (AV) (A)
J
j
Average forward current IF (AV) (A)
Ta MAX – I
F (AV)
Ceramic substrate (substrate size 50 mm
×
50 mm)
160
M
T
Average forward current IF (AV) (A)
M
T
Time t (ms)
r
th (j-a)
– t
T
r
10
0
0.3
0.1
0.2
0.8
0.6
0.4
0.5
0.7
1
0.1
0.01
0.3
0.03
3
Tj
=
150°C
75°C
25°C
125°C
P
F (AV)
– I
F (AV)
T
max – I
F (AV)
0
40
20
60
120
100
80
α
=
60°
120°
DC
360°
α
=
15 V
ConducVR
α
180°
140
0
0.8
1.2
2.0
2.4
0.4
1.6
Rectangular
waveform
0
0
0.2
0.8
0.8
1.2
2.0
2.4
0.1
0.3
0.6
0.5
0.4
1.6
0.4
α
=
60°
120°
DC
180°
0.7
360°
α
Conduction angle
α
Rectangular
waveform
0
0
40
160
0.8
1.2
2.0
2.4
20
60
120
100
0.4
1.6
80
α
=
60°
120°
DC
360°
α
VR
=
15 V
ConductionIF (AV)
α
180°
140
Rectangular
waveform
相關(guān)PDF資料
PDF描述
CRS11 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.28 to 7.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
CRS11_06 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.52 to 7.84; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
CRS12 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.76 to 8.64; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
CRS12_06 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.76 to 8.10; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
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