參數(shù)資料
型號(hào): CR5AS
廠商: Mitsubishi Electric Corporation
英文描述: MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
中文描述: 中功率使用非絕緣型,玻璃鈍化型
文件頁(yè)數(shù): 6/7頁(yè)
文件大小: 105K
代理商: CR5AS
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
–40–20 0
20 40 60 80 100120140160
160
0
80
100
120
140
40
60
20
TYPICAL EXAMPLE
–40–20 0
20 40 60 80 100120140160
160
0
80
100
120
140
40
60
20
R
GK
= 220
TYPICAL EXAMPLE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
1
B
j
B
j
2 3
10
0
5 710
1
2 3 5 710
2
2 3 5 710
3
160
0
120
140
40
60
80
100
20
T
j
= 125°C
R
GK
= 220
TYPICAL EXAMPLE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/μs)
1
B
B
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
1
R
j
R
j
2 3 5 710
-1
2 3 5 710
0
2 3 5 710
1
10
2
10
1
10
3
10
0
2
3
5
7
2
3
5
7
2
3
5
7 TYPICAL EXAMPLE
T
j
= 125°C
BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
GATE TO CATHODE RESISTANCE (
)
1
B
G
)
B
G
)
60
–20
–40
–60
0 20 40
80 100120140
7
5
4
3
2
7
5
4
3
2
10
–1
10
0
10
1
DISTRIBUTION
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
H
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE I
GT
(25°C)= 35μA
V
D
= 12V
R
GK
= 220
2 3 5 710
-1
2 3 5 710
0
2 3 5 710
1
400
0
100
150
200
250
300
350
50
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
GATE TO CATHODE RESISTANCE (k
)
1
H
G
)
H
G
)
# 1 14μA 1.7mA
# 2 48μA 2.7mA
I
GT
(25°C)
I
H
(1K)
TYPICAL EXAMPLE
T
j
= 25°C
# 1
# 2
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