參數(shù)資料
型號: CR5AS
廠商: Mitsubishi Electric Corporation
英文描述: MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
中文描述: 中功率使用非絕緣型,玻璃鈍化型
文件頁數(shù): 4/7頁
文件大?。?/td> 105K
代理商: CR5AS
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
10
2
10
0
10
–1
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
7
5
10
–1
2 3 5 7
10
1
2 3 5 7
10
2
2 3 5 7
2 3
V
FGM
= 6V
V
GT
= 0.8V
I
GT
= 200μA
(T
j
= 25°C)
P
GM
= 0.5W
P
G(AV)
= 0.1W
V
GD
= 0.1V
I
FGM
= 0.3A
16
14
6
4
2
12
10
8
0
8
0
2
4
6
7
1
3
5
θ
360°
θ
= 30°
60°
120°
90°
180°
RESISTIVE, INDUCTIVE LOADS
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
A
AVERAGE ON-STATE CURRENT (A)
G
GATE CURRENT (mA)
2 3
10
0
7
5
3
2
5 710
1
2 3 5 710
2
2 3 5 710
3
10
1
2 3
10
–3
5 710
–2
2 3 5 710
–1
2 3 5 710
0
10
3
10
2
7
5
3
2
7
5
3
2
10
0
JUNCTION TO AMBIENT
JUNCTION TO CASE
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
C
AVERAGE ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
T
TIME (s)
120
60
40
20
140
100
80
0
8
0
2
4
6
7
1
3
5
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
θ
= 30°
60°
120°
90°
180°
GATE CHARACTERISTICS
120 140
60
–20
–40
–60
0
20 40
80 100
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
TYPICAL EXAMPLE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
1
G
j
G
j
# 1
# 2
# 1
@
11μA
# 2
@
61μA
I
GT
(25°C)
R
L
= 60
V
D
= 6V
1.0
0.8
0.7
0.6
0.3
0.4
0.1
0
–60
120 140
–40
–20
20
80
0.2
0.5
0.9
0
60
40
100
TYPICAL EXAMPLE
DISTRIBUTION
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
G
JUNCTION TEMPERATURE (°C)
T
j
= 25°C
相關(guān)PDF資料
PDF描述
CR5AS400-12 Surface Mount, Phase Control SCR 5 Amperes/400-600 Volts
CR5AS400-8 Surface Mount, Phase Control SCR 5 Amperes/400-600 Volts
CR5AS600-12 Surface Mount, Phase Control SCR 5 Amperes/400-600 Volts
CR5AS600-8 Surface Mount, Phase Control SCR 5 Amperes/400-600 Volts
CR5AS Surface Mount, Phase Control SCR 5 Amperes/400-600 Volts
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