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參數(shù)資料
| 型號(hào)： | CPH5856 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
| 中文描述： | MOSFET的：N溝道MOSFET的硅SBD智能交通：肖特基二極管通用開(kāi)關(guān)設(shè)備 |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大小： | 76K |
| 代理商： | CPH5856 |
CPH5856
No. A0687-4/6
0
0.5
1.0
1.5
2.0
3.0
2.5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VDS=10V
ID=2.5A
IT12040
2
2
3
5
7
2
3
5
7
2
3
5
7
10
1.0
0.1
0.01
0.1
2 3
5 71.0
0.01
2 3
5 7
Drain-to-Source Voltage, VDS -- V
2 3
5 710
2 3
5
IT12041
IDP=10A
ID=2.5A
Operation in this
area is limited by RDS(on).
100m
100
μ
s
1m
10m
≤
10
μ
s
0.1
1.0
2
3
5
7
10
7
2
3
5
7
5
3
2
5
3
2
10
100
7
5
3
2
1.0
VDD=10V
VGS=4V
td(on)
tf
tr
td(off)
IT12038
IT12036
0.01
0.1
Drain Current, ID -- A
10
1.0
2
3
5
7
2
3
5
7
2
3
5
7
10
1.0
7
5
3
2
0.1
7
5
3
2
VDS=10V
75
°
C
25
°
C
T=-25
°
C
IT12037
0
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0.01
0.1
10
1.0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
VGS=0V
-
°
C
2
°
C
T7
°
C
0
2
4
Drain-to-Source Voltage, VDS -- V
6
8
10
12
14
16
18
20
10
100
1000
7
5
3
2
7
5
3
2
f=1MHz
Ciss
Coss
Crss
IT12039
DCoprton(
T=25
°
C
IT12042
0
0
20
40
Ambient Temperature, Ta --
°
C
0.2
0.4
0.6
0.8
0.9
1.0
60
80
100
120
140
160
VGS -- Qg
[MOSFET]
[MOSFET]
[MOSFET]
PD -- Ta
A S O
Total Gate Charge, Qg -- nC
G
A
Mounedonacrmcbord(600mm
2
08mm 1unt
D
Ta=25
°
C
Single pulse
Mounted on a ceramic board (600mm
2
0.8mm) 1unit
SW Time -- ID
Ciss, Coss, Crss -- VDS
y
fs
-- ID
IS -- VSD
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
Drain Current, ID -- A
S
F
y
f
Diode Forward Voltage, VSD -- V
S
C
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| CPH5863 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
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