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參數(shù)資料
| 型號(hào)： | CPH5856 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
| 中文描述： | MOSFET的：N溝道MOSFET的硅SBD智能交通：肖特基二極管通用開關(guān)設(shè)備 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 76K |
| 代理商： | CPH5856 |
CPH5856
No. A0687-3/6
Switching Time Test Circuit
[MOSFET]
trr Test Circuit
[SBD]
PW=10
μ
s
D.C.
≤
1%
P.G
50
G
S
D
ID=1.5A
RL=6.67
VDD=10V
VOUT
CPH5856
VIN
4V
0V
VIN
Duty
≤
10%
50
100
10
--5V
trr
1
1
1
10
μ
s
RDS(on) -- VGS
ID -- VDS
25
ID -- VGS
RDS(on) -- Ta
[MOSFET]
[MOSFET]
[MOSFET]
Ta=25
°
C
[MOSFET]
S
O
S
O
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
D
Gate-to-Source Voltage, VGS -- V
D
Ambient Temperature, Ta --
°
C
0.5
1.0
1.5
2.0
2.5
3.0
--60
--40
--20
0
20
40
60
80
100
120
140
160
0
2
4
6
8
IT12034
0
0
0.5
1.0
2.0
2.5
0.1
1.5
0
50
100
150
200
250
0
0.2
0.3
0.4
0.5
VGS=15V
IT12032
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VDS=10V
-
2
°
C
T7
°
C
IT12033
2
°
C
IT12035
50
100
150
200
250
0
4V
5V
6V
8V
ID=1.5A, VGS=4.0V
ID=0.5A, VGS=1.8V
ID=1.0A, VGS=2.5V
20V
1.0A
1.5A
ID=0.5A
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| CPH5857 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
| CPH5862 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
| CPH5863 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
| CPH5863-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH SCHOT DIODE SOT346 |
| CPH5870 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET, Schottky Barrier Diode, General-Purpose Switching Device Applications |
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