參數(shù)資料
型號(hào): CPH5706
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 41K
代理商: CPH5706
CPH5705
No.6591-1/5
Features
Composite type with a PNP transistor and a Schottky
barrier diode contained in one package facilitating
high-density mounting.
The CPH5705 consists of two chips which are
equivalent to the CPH3109 and the SBS004, respec-
tively.
Ultrasmall package facilitates miniaturization in end
products.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
Conditions
Ratings
Unit
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : PE
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
--30
--30
--5
--3
--5
--600
0.9
150
V
V
V
A
A
mA
W
°
C
°
C
Mounted on a ceramic board (600mm
2
0.8mm)
--55 to +125
VRRM
VRSM
IO
IFSM
Tj
Tstg
15
15
1
10
V
V
A
A
°
C
°
C
50Hz sine wave, 1cycle
--55 to +125
--55 to +125
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6591
CPH5705
Package Dimensions
unit : mm
2156
[CPH5705]
61500 TS IM TA-2903
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
TR : PNP Epitaxial Planar Silicon Transistor
SBD : Sohottky Barrier Diode
1 : Cathode
2 : Collector
3 : Base
4 : Emitter
5 : Anode
SANYO : CPH5
1
0
0
2
0
2.9
0.05
0.4
0.95
0
0
0
0.15
0.4
1
2
3
4
5
DC / DC Converter Applications
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