參數(shù)資料
型號： CPH3325
廠商： Sanyo Electric Co.,Ltd.
英文描述： P-Channel Silicon MOSFET General-Purpose Switching Device
中文描述： P溝道MOSFET的硅通用開關設備
文件頁數(shù)： 1/4頁
文件大?。?/td> 49K
代理商： CPH3325
CPH3325
No.7924-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
93004 TS IM TA-100523
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
CPH3325
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
Ratings
Unit
V
V
A
A
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
--100
±
20
--0.3
--1.2
0.9
150
PW
≤
10
μ
s, duty cycle
≤
1%
Mounted on a ceramic board (900mm
2
0.8mm)
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID= --1mA, VGS=0
VDS= --100V, VGS=0
VGS=
±
16V, VDS=0
VDS= --10V, ID= --1mA
VDS= --10V, ID= --150mA
ID= --150mA, VGS= --10V
ID= --150mA, VGS= --4V
VDS= --20V, f=1MHz
VDS= --20V, f=1MHz
VDS= --20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
--100
V
μ
A
μ
A
V
S
pF
pF
pF
ns
ns
ns
ns
--1
±
10
--2.6
--1.2
0.2
0.45
3.0
3.6
3.9
5.0
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : YA
78
6.0
4.0
6
3
16
16
Continued on next page.
Ordering number : ENN7924
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