參數(shù)資料
型號(hào): CPH3247
廠商: Sanyo Electric Co.,Ltd.
英文描述: NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications
中文描述: 瑞展硅晶體管大電流開(kāi)關(guān)應(yīng)用
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 46K
代理商: CPH3247
CPH3247
No. A0400-2/4
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Collector-to-Emitter Saturation Voltage
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=1A, IB=50mA
IC=1A, IB=100mA
IC=1A, IB=100mA
IC=10
μ
A, IE=0A
IC=100
μ
A, RBE=0
IC=1mA, RBE=
IE=10
μ
A, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
90
80
135
120
1.2
mV
mV
V
V
V
V
V
ns
ns
ns
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
0.84
120
120
80
6.5
40
920
32
Package Dimensions
unit : mm
7015A-003
Switching Time Test Circuit
1 : Base
2 : Emitter
3 : Collector
SANYO : CPH3
2.9
0.05
0.4
2
1
0
0
0
0
0
0.15
2
1
3
0.95
VR10
RB
VCC=40V
VBE= --5V
+
+
50
INPUT
OUTPUT
RL
100
μ
F
470
μ
F
PW=20
μ
s
D.C.
1%
IB1
IB2
10IB1= --10IB2=IC=0.5A
IC -- VBE
IC -- VCE
C
C
Base-to-Emitter Voltage, VBE -- V
Collector-to-Emitter Voltage, VCE -- V
0
0.4
1.2
2.0
1.6
0.8
0.2
0.6
1.4
1.8
1.0
0
0.1
0.2
0.5
0.3
0.4
0.6
0.7
0.8
0.9
1.0
IT11005
0
0
0.8
1.2
1.6
2.0
0.2
0.4
1.0
0.8
0.6
IT11004
0.4
IB=0mA
5mA
20mA
10mA
2mA
1mA
VCE=5V
T
°
C
2
°
C
-
°
C
6m
8A
1m
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