參數(shù)資料
型號(hào): CPC7691BBTR
廠商: CLARE INC
元件分類: 通信及網(wǎng)絡(luò)
中文描述: SPECIALTY TELECOM CIRCUIT, PDSO16
封裝: ROHS COMPLIANT, SOIC-16
文件頁(yè)數(shù): 16/17頁(yè)
文件大?。?/td> 475K
代理商: CPC7691BBTR
CPC7691
8
PRELIMINARY
R00E
1.7 Digital I/O Electrical Specifications
1.8 Voltage and Power Specifications
Parameter
Test Conditions
Symbol
Minimum
Typical
Maximum
Unit
Input Characteristics
Input voltage, Logic low
Input voltage falling
VIL
0.8
1.1
V
Input voltage, Logic high
Input voltage rising
VIH
1.7
2.0
Input leakage current,
INRINGING, Logic high
VDD = 5.5 V, VBAT = -75 V, VHI =2.4V
IIH
-0.1
1
μA
Input leakage current,
INRINGING, Logic low
VDD = 5.5 V, VBAT = -75 V, VIL = 0.4V
IIL
-0.1
1
μA
Input leakage current,
LATCH Logic high
VDD = 4.5 V, VBAT = -75 V, VIH = 2.4V
IIH
719
-
μA
LATCH Pull-up
Minimum Load
VDD = 4.5 V, VBAT = -75 V, IIN = -10 μA
Latch input transitions to logic high.
Logic = High
True
Input leakage current,
LATCH Logic low
VDD = 5.5 V, VBAT = -75 V, VIL = 0.4V
IIL
-
46
125
μA
Input leakage current,
TSD Logic high
VDD = 5.5 V, VBAT = -75 V, VIH = 2.4
IIH
10
16
30
μA
Input leakage current,
TSD Logic low
VDD = 5.5 V, VBAT = -75 V, VIL = 0.4V
IIL
10
16
30
μA
Output Characteristics
Output voltage,
TSD Logic high
VDD = 5.5 V, VBAT = -75 V, ITSD = 10μAVTSD_off
2.4
VDD
-
V
Output voltage,
TSD Logic low
VDD = 5.5 V, VBAT = -75 V, ITSD = 1mA
VTSD_on
-0
0.4
V
Parameter
Test Conditions
Symbol
Minimum
Typical
Maximum
Unit
Voltage Requirements
VDD
-
VDD
4.5
5.0
5.5
V
VBAT
1
-
VBAT
-19
-48
-72
V
1V
BAT is used only for internal protection circuitry. If VBAT goes more positive than -10 V, the device will enter the all-off state, and will remain in the all-off state until
the battery goes more negative than -15 V
Power Specifications
Power consumption
VDD = 5 V, VBAT = -48 V,
Measure IDD and IBAT,
Talk and All-Off states
P
-
5.5
10.5
mW
Ringing state
P
-
6.5
10.5
mW
VDD current
VDD = 5 V, VBAT = -48 V
Talk and All-Off states
IDD
-1.1
2.0
mA
Ringing state
IDD
-1.3
2.0
mA
VBAT current
VDD = 5V, VBAT = -48 V, All states
IBAT
-0.1
10
μA
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