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參數(shù)資料
| 型號： | CPC7582BC |
| 廠商： | CLARE INC |
| 元件分類： | 通信及網絡 |
| 中文描述： | SPECIALTY TELECOM CIRCUIT, PDSO16 |
| 封裝： | ROHS COMPLIANT, SOIC-16 |
| 文件頁數(shù)： | 19/19頁 |
| 文件大?。?/td> | 566K |
| 代理商： | CPC7582BC |
CPC7582
R05
www.clare.com
9
1.7 Additional Electrical Characteristics
Parameter
Conditions
Symbol
Minimum
Typical
Maximum
Unit
Digital input characteristics
Input low voltage
-
VIL
--
1.5
V
Input high voltage
-
VIH
3.5
-
Input leakage current
(high)
VDD = 5.5 V, VBAT = -75 V, VIH = 5 V
IIH
-0.1
1
μA
Input leakage current
(low)
VDD = 5.5 V, VBAT = -75 V, VIL = 0 V
IIL
-0.1
1
Voltage Requirements
VDD
-
VDD
4.5
5.0
5.5
V
VBAT
1
-
VBAT
-19
-48
-72
V
1V
BAT is used only for internal protection circuitry. If VBAT goes more positive than -10 V, the device will enter the all-off state and will remain in the all-off state until
the battery goes more negative than -15 V
Power requirements
Power consumption in
talk and all-off states
VDD = 5 V, VBAT = -48 V, measure IDD
and IBAT
P
-5.5
10
mW
Power consumption in
all other states
6.5
10
VDD current in talk and
all-off states
VDD = 5 V, VBAT = -48 V
IDD
-1.1
2.0
mA
VDD current in all other
states
IDD
-1.3
2.0
VBAT current in any state VDD = 5 V, VBAT = -48 V
IBAT
-0.1
10
μA
Temperature Shutdown Requirements (temperature shutdown flag is active low)
Shutdown activation
temperature
Not production tested - limits are
guaranteed by design and Quality
Control sampling audits.
TTSD_on
110
125
150
°C
Shutdown circuit
hysteresis
TTSD_off
10
-
25
°C
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