參數(shù)資料
型號： CP756
英文描述： TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 500MA I(C) | TO-92
中文描述： 晶體管|晶體管|進步黨| 200伏五（巴西）總裁| 500mA的一（c）|至92
文件頁數(shù)： 2/5頁
文件大小： 48K
代理商： CP756
Continental Device India Limited
Data Sheet
Page 2 of 5
ELECTRICAL CHARACTERISTICS
(Ta =25 °C unless otherwise specified)
Characteristic
Collector Base Voltage
I
C
=100μA, I
E
=0
Collector Emitter Voltage
I
C
=10mA, I
B
=0
Emitter Base Voltage
I
E
=100μA, I
C
=0
Collector Cutoff Current
V
CB
=160V, I
E
=0
V
CB
=200V, I
E
=0
Emitter Cutoff Current
V
EB
=3V, I
C
=0
Collector-Emitter Saturation Voltage
I
C
=100mA, I
B
=10mA
Base-Emitter Saturation Voltage
I
C
=100mA, I
B
=10mA
Base Emitter on voltage
I
C
=100mA, V
CE
=5V
DC Current Gain
I
C
=10mA, V
CE
=5V
I
C
=100mA, V
CE
=5V
*
Symbol
CP 756
CP 757
Unit
BV
CBO
>200
>300
V
BV
CEO
>200
>300
V
BV
EBO
>5
>5
V
I
CBO
<100
-
-
nA
nA
<100
I
EBO
<100
<100
nA
V
CE
(sat)*
<0.5
<0.5
V
V
BE (sat)*
<1.0
<1.0
V
V
BE(on)*
<1.0
<1.0
V
h
FE*
>40
>50
>40
>50
-
-
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
I
C
=10mA, V
CE
=20V, f=20MHz
Output Capacitance
V
CB
=20V, I
E
=0, f=1MHz
f
T
>30
>30
MHz
C
obo
<20
<20
pF
*Measured under pulsed conditions : Pulse Width = 300μs, Duty Cycle
≤
2%.
CP756
CP757
相關(guān)PDF資料
PDF描述
CP757 TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 500MA I(C) | TO-92
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CPW255P TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 9.5A I(D)
CPW256A TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 500V V(BR)DSS | 17.5A I(D)
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