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參數(shù)資料
| 型號： | CP757 |
| 英文描述： | TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 500MA I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 300V五（巴西）總裁| 500mA的一（c）|至92 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 48K |
| 代理商： | CP757 |
Continental Device India Limited
Data Sheet
Page 1 of 5
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Medium Power High Voltage Transistors
Complementary to CN 656 and CN 657.
CP756
CP757
ABSOLUTE MAXIMUM RATINGS
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Collector Current
Continuous Collector Current
Practical power dissipation
*
Power Dissipation : At Ta=25 °C
Derate Above 25 °C
Operating and Storage Temperature Range
Symbol CP 756
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
totp
P
tot
CP 757
Unit
V
V
V
A
A
W
W
mW/ °C
°C
200
200
-
-
-
-
-
-
-55 to +200
300
300
5.0
1.0
0.5
1.5
0.75
5.7
-
-
-
-
-
-
T
j
,T
stg
THERMAL RESISTANCE
Junction to Ambient 1
Junction to Ambient 2
Junction to Case
R
th (j-a)
1
R
th (j-a)
2+
R
th (j-c)
-
-
-
<175
<116
<70
-
-
-
°C/ W
°C/ W
°C/ W
*The power which can be dissipated assuming device mounted in typical manner on
P.C.B with copper equal to 1 sq.inch minimum.
(2)Device mounted on P.C.B. with copper equal to 1 Sq.inch minimum.
1 = EMITTER
2 = BASE
3 = COLLECTOR
DIM
A
B
C
D
E
F
G
H
K
L
MIN
4,32
4,45
3,18
0,41
0,35
MAX
5,33
5,20
4,19
0,55
0,50
5 DEG
1,14
1,14
12,70
1.982
1,40
1,53
–
2.082
ALL DIMENSIONS IN M.M.
1 2 3
E C B
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-92 Plastic Package
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