參數(shù)資料
型號: CP107
英文描述: TRANSISTOR | BJT | DARLINGTON | PNP | 130V V(BR)CEO | 10A I(C) | TO-220AB
中文描述: 晶體管|晶體管|達(dá)林頓|進(jìn)步黨| 130V五(巴西)總裁| 10A條一(c)| TO - 220AB現(xiàn)有
文件頁數(shù): 1/3頁
文件大?。?/td> 88K
代理商: CP107
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR
CP107
(9AW)
TO-220
Non- Iso
MARKING: CP
107
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Peak t=30ms
Base Current
Collector Power Dissipation @ Tc=25 deg C
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Voltage
DC Current Gain
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
VALUE
140
130
5.0
10
15
1.0
60
150
-55 to +150
UNIT
V
V
V
A
A
A
W
deg C
deg C
SYMBOL
ICBO
IEBO
VCEO
hFE
TEST CONDITION
VCB=140V, IE=0
VEB=5V, IC=0
IC=30mA, IB=0
IC=6A, VCE=4V
IC=10A, VCE=4V
IC=6A, IB=6mA
IC=6A, IB=6mA
MIN
-
-
130
2.0
1.0
-
-
TYP
-
-
-
-
-
-
-
MAX
100
3.0
-
20
-
2.5
3.0
UNIT
uA
mA
V
K
K
V
V
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Dynamic Characteristics
Transition Frequency
Collector Output Capacitance
VCE(Sat)
VBE(Sat)
ft
Cob
VCE=12V, IC=1A,
VCB=10V, IE=0
f=1MHz
-
-
65
160
-
-
MHz
pF
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 3
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