參數(shù)資料
型號: COP8SE
廠商: National Semiconductor Corporation
英文描述: 8-Bit CMOS ROM Based and OTP Microcontrollers with 4k Memory and 128 Bytes EERAM(8位基于CMOS ROM和一次可編程的帶4K存儲器和128字節(jié)的EERAM微控制器)
中文描述: 8位的CMOS基于ROM和OTP微控制器與4K的內(nèi)存和128字節(jié)伊拉姆(8位基于的CMOS光盤和一次可編程的帶4K的存儲器和128字節(jié)的伊拉姆微控制器)
文件頁數(shù): 8/47頁
文件大?。?/td> 481K
代理商: COP8SE
Absolute Maximum Ratings
(Note 14)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC
)
Voltage at Any Pin
Total Current into V
CC
Pin
(Source)
Total Current out of GND Pin
(Sink)
7V
0.3V to V
CC
+0.3V
80 mA
100 mA
Storage Temperature Range
ESD Protection Level
65C to +150C
2kV (Human Body
Model)
ESD Protection Level (CKI
pin)
Note 14:
Absolute maximum ratings indicate limits beyond which damage to
the device may occur. DC and AC electrical specifications are not ensured
when operating the device at absolute maximum ratings.
Note 15:
The COP8SER7 is for Engineering Development purpose only and
is not recommended for production or pre-production use.
150 V (Machine
Model)
DC Electrical Characteristics (SEC5 only)
40C
T
A
+135C unless otherwise specified.
Parameter
Operating Voltage
Power Supply Rise Time
Power Supply Ripple (Note 17)
Supply Current (Note 18)
CKI = 10 MHz
HALT Current (Note 19)
IDLE Current (Note 18)
CKI = 10 MHz
Input Levels (V
IH
, V
IL
)
RESET
Logic High
Logic Low
CKI, All Other Inputs
Logic High
Logic Low
Hi-Z Input Leakage
Input Pullup Current
G and L Port Input Hysteresis
Conditions
Min
4.5
10
Typ
Max
5.5
50 x 10
6
0.1 V
cc
Units
V
ns
V
Peak-to-Peak
V
CC
= 5.5V, t
C
= 1 μs
V
CC
= 5.5V, CKI = 0 MHz
8
50
mA
μA
15
V
CC
= 5.5V, t
C
= 1 μs
2
mA
0.8 V
cc
V
V
0.2 V
cc
0.7 V
cc
V
V
μA
μA
V
0.2 V
cc
+5
400
V
CC
= 5.5V
V
CC
= 5.5V, V
IN
= 0V
V
CC
= 5.5V
5
35
0.25
V
cc
Output Current Levels
Source (Weak Pull-Up Mode)
Source (Push-Pull Mode)
Sink (Push-Pull Mode)
TRI-STATE Leakage
Allowable Sink Current per Pin (Note 22)
Maximum Input Current without Latchup (Note
20)
RAM Retention Voltage, Vr
V
CC
Rise Time from a V
CC
2.0V
Input Capacitance
EERAM Number of Write Cycles
EERAM Data Retention
V
CC
= 4.5V, V
OH
= 2.7V
V
CC
= 4.5V, V
OH
= 3.3V
V
CC
= 4.5V, V
OL
= 0.4V
V
CC
= 5.5V
9.0
0.4
1.6
5
140
μA
mA
mA
μA
+5
Room Temp.
±
200
mA
2.0
6
V
μs
pF
(Note 23)
(Note 22)
(Note 22)
(Note 22)
7
10
5
cycles
years
10
C
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