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| 型號(hào)： | COP8SE |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | 8-Bit CMOS ROM Based and OTP Microcontrollers with 4k Memory and 128 Bytes EERAM(8位基于CMOS ROM和一次可編程的帶4K存儲(chǔ)器和128字節(jié)的EERAM微控制器) |
| 中文描述： | 8位的CMOS基于ROM和OTP微控制器與4K的內(nèi)存和128字節(jié)伊拉姆（8位基于的CMOS光盤和一次可編程的帶4K的存儲(chǔ)器和128字節(jié)的伊拉姆微控制器） |
| 文件頁數(shù)： | 11/47頁 |
| 文件大小： | 481K |
| 代理商： | COP8SE |
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4.0 Pin Descriptions
(Continued)
5.0 Functional Description
The architecture of the devices is a modified Harvard archi-
tecture. With the Harvard architecture, the program memory
ROM or EPROM is separated from the data store memory
(RAM). Program Memory will be referred to as ROM. Both
ROM and RAM have their own separate addressing space
with separate address buses. The architecture, though
based on the Harvard architecture, permits transfer of data
from ROM to RAM.
5.1 CPU REGISTERS
The CPU can do an 8-bit addition, subtraction, logical or shift
operation in one instruction (t
C
) cycle time.
There are six CPU registers:
A is the 8-bit Accumulator Register
PC is the 15-bit Program Counter Register
PU is the upper 7 bits of the program counter (PC)
PL is the lower 8 bits of the program counter (PC)
B is an 8-bit RAM address pointer, which can be optionally
post auto incremented or decremented.
X is an 8-bit alternate RAM address pointer, which can be
optionally post auto incremented or decremented.
S is the 8-bit Segment Address Register used to extend the
lower half of the address range (00 to 7F) into 256 data seg-
ments of 128 bytes each.
SP is the 8-bit stack pointer, which points to the subroutine/
interrupt stack (in RAM). With reset the SP is initialized to
RAM address 02F Hex (devices with 64 bytes of RAM), or
initialized to RAM address 06F Hex (devices with 128 bytes
of RAM).
All the CPU registers are memory mapped with the excep-
tion of the Accumulator (A) and the Program Counter (PC).
5.2 PROGRAM MEMORY
The program memory consists of 4096 Bytes of ROM or
32,768 bytes of OTP EPROM. These bytes may hold pro-
gram instructions or constant data (data tables for the LAID
instruction, jump vectors for the JID instruction, and interrupt
vectors for the VIS instruction). The program memory is ad-
dressed by the 15-bit program counter (PC). All interrupts in
the device vector to program memory location 0FF Hex. The
contents of the program memory read 00 Hex in the erased
state. Program execution starts at location 0 after RESET.
5.3 DATA MEMORY
The data memory address space includes the on-chip RAM
and data registers, the I/O registers (Configuration, Data and
Pin), the control registers, the MICROWIRE/PLUS SIO shift
register, and the various registers, and counters associated
with the timers (with the exception of the IDLE timer). Data
memory is addressed directly by the instruction or indirectly
by the B, X and SP pointers.
The data memory consists of 256 bytes of combined EE-
RAM and RAM. Sixteen bytes of RAM are mapped as “reg-
isters” at addresses 0F0 to 0FE Hex. These registers can be
loaded immediately, and also decremented and tested with
the DRSZ (decrement register and skip if zero) instruction.
The memory pointer registers X, SP and B are memory
mapped into this space at address locations 0FC to 0FE Hex
respectively, with the other registers (except 0FF) being
available for general usage.
The instruction set permits any bit in memory to be set, reset
or tested. All I/O and registers (except A and PC) are
memory mapped; therefore, I/O bits and register bits can be
directly and individually set, reset and tested. The accumula-
tor (A) bits can also be directly and individually tested.
Note:
RAM contents are undefined upon power-up.
5.4 EERAM / NON-VOLATILE MEMORY
The devices provide 128 bytes of EERAM in segment 1 for
nonvolatile data memory. The data EERAM can be read and
written in exactly the same way as the RAM. All instructions
that perform read and write operations on the RAM work
similarly upon the data EERAM. EERAM write cycles take
much more time than reads. During this time, processing
continues, but all EERAM accesses are inhibited. The data
EERAM contains all 00s when shipped by the factory.
A data memory EERAM programming cycle is initiated by an
instruction that writes to the EERAM such as X, LD, SBIT
and RBIT. The EERAM memory support circuitry sets the
E2BUSY flag in the E2CFG register immediately upon begin-
ning a data EERAM write cycle. It will be automatically reset
by the hardware at the end of the data EERAM write cycle.
The application program should test the E2BUSY flag before
attempting a read or write operation to the data EERAM. An
EERAM read or write operation while an operation is in
progress will be ignored and the E2ILRW flag in the E2CFG
register will be set to indicate the error status. Once the write
operation starts, nothing will stop the write operation, not by
resetting the device, and not even turning off the VCC will
guarantee the write operation to stop.
DS100973-12
FIGURE 6. I/O Port Configurations—Output Mode
DS100973-11
FIGURE 7. I/O Port Configurations—Input Mode
C
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11
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