參數(shù)資料
型號: COP8CDR9IMT8
廠商: National Semiconductor
文件頁數(shù): 36/111頁
文件大?。?/td> 0K
描述: IC MCU CMOS 8BIT 48-TSSOP
標準包裝: 38
系列: COP8™ 8C
核心處理器: COP8
芯體尺寸: 8-位
速度: 20MHz
連通性: Microwire/Plus(SPI),UART/USART
外圍設(shè)備: POR,PWM,WDT
輸入/輸出數(shù): 39
程序存儲器容量: 32KB(32K x 8)
程序存儲器類型: 閃存
RAM 容量: 1K x 8
電壓 - 電源 (Vcc/Vdd): 2.7 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 16x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 48-TFSOP(0.240",6.10mm 寬)
包裝: 管件
其它名稱: *COP8CDR9IMT8
SNOS535I – OCTOBER 2000 – REVISED MARCH 2013
5.8.1
Oscillator
CKI is the clock input while G7/CKO is the clock generator output to the crystal. An on-chip bias resistor
connected between CKI and CKO is provided to reduce system part count. The value of the resistor is in
the range of 0.5M to 2M (typically 1.0M). Table 5-1 shows the component values required for various
standard crystal values. Resistor R2 is on-chip, for the high speed oscillator, and is shown for reference.
Figure 5-6 and Figure 5-6 shows the crystal oscillator connection diagrams. A ceramic resonator of the
required frequency may be used in place of a crystal if the accuracy requirements are not quite as strict.
High Speed Oscillator
Low Speed Oscillator
Figure 5-6. Crystal Oscillator
Table 5-1. Crystal Oscillator Configuration, TA = 25°C, VCC = 5V
(1)
CKI Freq.
R1 (k
Ω)
R2 (M
Ω)
C1 (pF)
C2 (pF)
(MHz)
0
On Chip
18
10
0
On Chip
18
5
0
On Chip
18–36
1
5.6
On Chip
100
100–156
0.455
0
20
**
32.768 kHz*
(1)
*Applies to connection to low speed oscillator on port pins L0 and L1 only.
**See Note below.
The crystal and other oscillator components should be placed in close proximity to the CKI and CKO pins
to minimize printed circuit trace length.
The values for the external capacitors should be chosen to obtain the manufacturer's specified load
capacitance for the crystal when combined with the parasitic capacitance of the trace, socket, and
package (which can vary from 0 to 8 pF). The guideline in choosing these capacitors is:
Manufacturer's specified load cap = (C1 * C2) / (C1 + C2) + Cparasitic
C2 can be trimmed to obtain the desired frequency. C2 should be less than or equal to C1.
NOTE
The low power design of the low speed oscillator makes it extremely sensitive to board
layout and load capacitance. The user should place the crystal and load capacitors within
1cm. of the device and must ensure that the above equation for load capacitance is strictly
followed. If these conditions are not met, the application may have problems with startup of
the low speed oscillator.
30
Functional Description
Copyright 2000–2013, Texas Instruments Incorporated
Product Folder Links: COP8CBR9 COP8CCR9 COP8CDR9
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