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參數(shù)資料
| 型號(hào)： | CMPWR160SA/R |
| 元件分類： | 電源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8 |
| 封裝： | POWER, SOIC-8 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大小： | 112K |
| 代理商： | CMPWR160SA/R |
2001 California Micro Devices Corp. All rights reserved. SmartOR
is a trademark of California Micro Devices Corporation.
9/17/2001
215 Topaz Street, Milpitas, California 95035
Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com
6
CMPWR160
CALIFORNIA MICRO DEVICES
Typical Thermal Characteristics
Thermal dissipation of junction heat consists primarily
of two paths in series. The first path is the junction to
the case (
θ
) thermal resistance which is defined by
the package style, and the second path is the case to
ambient (
θ
) thermal resistance, which is dependent on
board layout.
The overall junction to ambient (
θ
JA
) thermal resistance is
equal to:
θ
JA
=
θ
JC
+
θ
CA
For a given package style and board layout, the operat-
ing junction temperature is a function of junction power
dissipation P
, and the ambient temperature, resulting
in the following thermal equation:
T
JUNC
= T
AMB
+ P
JUNC
(
θ
JC
) + P
JUNC
(
θ
CA
)
= T
AMB
+ P
JUNC
(
θ
JA
)
The CMPWR160 is housed in a thermally enhanced
package where all the GND pins (5 through 8) are
integral to the leadframe (fused leadframe). When the
device is mounted on a double sided printed circuit
board with two square inches of copper allocated for
“
heat spreading
”
, the resulting
θ
JA
is 50
°
C/W for the
CMPWR160SA (SOIC), and 70
°
C/W for the
CMPWR160MA (MSOP).
Based on a maximum power dissipation of
1.0W (2Vx500mA) with an ambient of 70
°
C the
resulting junction temperature for the CMPWR160SA
will be:
T
JUNC
= T
AMB
+ P
JUNC
(
θ
JA
)
= 70
°
C + 1.0W (50
°
C/W)
= 70
°
C + 50
°
C = 120
°
C
In the case of the CMPWR160MA, the maximum
power dissipated is 0.6W (2V x 300mA). So for an
ambient of 70
°
C, the junction temperature will be:
T
JUNC
= 70
°
C + 0.6 (70
°
C/W)
= 70
°
C + 42
°
C
= 112
°
C
All thermal characteristics were measured using a
double sided board with two square inches of copper
area connected to the GND pins for
“
heat spreading
”
.
Measurements showing performance up to junction
temperature of 125
°
C were performed under light load
conditions (5mA). This allows the ambient temperature to
be representative of the internal junction temperature.
Note:
The use of multi-layer board construction with
power planes will further enhance the thermal perfor-
mance of the package. In the event of no copper area
being dedicated for heat spreading, a multi-layer board
construction, using only the minimum size pad layout,
will typically provide the CMPWR160SA with an overall
θ
of 70
°
C/W which allows up to 780mW to be safely
dissipated.
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