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參數(shù)資料
| 型號： | CMNT3904E |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 中文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | 1 X 0.80 MM, 0.50 MM HEIGHT, ULTRA SMALL, FEMTOMINI-5 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 363K |
| 代理商： | CMNT3904E |
CMNT3904E NPN
CMNT3906E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMNT3904E
and CMNT3906E Low VCE(SAT) NPN and PNP
Transistors, respectively, are designed for applications
where ultra small size and power dissipation are the
prime requirements. Packaged in an FEMTOmini
SOT-953 package, these components provide
performance characteristics suitable for the most
demanding size constrained applications.
MARKING CODES: CMNT3904E: CL
CMNT3906E: CM
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Continuous Collector Current
IC
200
mA
Power Dissipation
PD
250
mW
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
500
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
NPN
PNP
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICEV
VCE=30V, VEB=3.0V
50
nA
BVCBO
IC=10A
60
115
90
V
BVCEO
IC=1.0mA
40
60
55
V
BVEBO
IE=10A
6.0
7.5
7.9
V
VCE(SAT)
IC=10mA, IB=1.0mA
.057
.05
0.1
V
VCE(SAT)
IC=50mA, IB=5.0mA
0.1
0.2
V
VBE(SAT)
IC=10mA, IB=1.0mA
0.65
0.75
0.85
V
VBE(SAT)
IC=50mA, IB=5.0mA
0.85
0.95
V
hFE
VCE=1.0V, IC=0.1mA
90
240
130
hFE
VCE=1.0V, IC=1.0mA
100
235
150
Enhanced Specification
FEATURES
Very Small Package Size
Low Package Profile, 0.5mm
200mA Collector Current
Low VCE(SAT) (0.1V Typ @ 50mA)
Small, FEMTOmini 1 x 0.8mm,
SOT-953 Surface Mount Package
APPLICATIONS
DC / DC Converters
Voltage Clamping
Protection Circuits
Battery powered equipment including:
Cell Phones, Digital Cameras, Pagers,
PDAs, Laptop Computers, etc.
SOT-953 CASE
R2 (25-January 2010)
www.centr a lsemi.com
相關(guān)PDF資料 |
PDF描述 |
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| CMPT2222AE | |
| CMPT2907AE | |
| CMPT3904E | |
| CMPT3906E | |
| CMPT3906TR | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CMNT3904E TR | 制造商:Central Semiconductor Corp 功能描述:Trans GP BJT NPN 40V 0.2A 5-Pin SOT-953 T/R |
| CMNT3904E_10 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTOR |
| CMNT3906E | 功能描述:兩極晶體管 - BJT Small Sig Transistor PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CMNT3906E TR | 制造商:CENTRAL SEMICONDUCTOR 功能描述:CMNT3906 Series PNP 250 mW 40 V Surface Mount Silicon Transistor - SOT-953 |
| CMNTVS12V | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 Transient Suppressor RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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