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參數(shù)資料
| 型號(hào)： | CMMT591A |
| 英文描述： | TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1A I(C) | SOT-23 |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 40V的五（巴西）總裁| 1A條一（c）| SOT - 23封裝 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 38K |
| 代理商： | CMMT591A |
Continental Device India Limited
Data Sheet
Page 2 of 3
RATINGS
(at T
A
= 25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
Peak Pulse current
Base current
Total power dissipation at T
amb
= 25°C
Storage temperature
Junction temperature
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
max.
max.
max.
max.
max.
max.
max.
-55 to +150 ° C
max.
80 V
60 V
5 V
1 A
2 A
200 mA
500 mW
150 ° C
CHARACTERISTICS
(at T
A
= 25°C unless otherwise specified)
Collector cut-off current
I
E
= 0; V
CB
= 60 V
V
BE
= 0; V
CE
= 60 V
I
CBO
I
CES
max.
max.
100 nA
100 nA
Emitter cut-off current
V
EB
= 4 V; I
C
= 0
I
EBO
max.
100 nA
Breakdown voltages
I
C
= 10 mA; I
B
= 0
I
C
= 100 μA; I
E
= 0
I
E
= 100 μA; I
C
= 0
V
CEO
V
CBO
V
EBO
min.
min.
min.
60 V
80 V
5 V
Base-emitter voltage
I
C
= 1 A; V
CE
= 5 V
V
BE
*
max.
1 V
Saturation voltage
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
I
C
= 1 A; I
B
= 100 mA
V
CEsat
* max.
300 mV
600 mV
1.2 V
max.
max.
V
BEsat
*
D.C. current gain
I
C
= 1 mA; V
CE
= 5 V
I
C
= 500 mA; V
CE
= 5 V*
h
FE
min.
100
min.
max.
100
300
I
C
= 1 A; V
CE
= 5 V*
I
C
= 2 A; V
CE
= 5 V*
min.
80
min.
15
Collector capacitance at f = 1 MHz
I
E
= 0; V
CB
= 10 V
C
ob
max.
10 pF
Transition frequency at f = 100 MHz
I
C
= 50 mA; V
CE
= 10 V
f
T
min.
150 MHz
*Measured under pulsed conditions: Pulse width = 300 μs, duty cycle = 2%.
CMMT591
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