- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384227 > CMBTA05 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 500MA I(C) | TO-236AA PDF資料下載
參數(shù)資料
| 型號： | CMBTA05 |
| 英文描述： | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 500MA I(C) | TO-236AA |
| 中文描述： | 晶體管|晶體管|叩| 60V的五（巴西）總裁| 500mA的一（c）|至236AA |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 38K |
| 代理商： | CMBTA05 |
Continental Device India Limited
Data Sheet
Page 3 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail sales@cdil.com www.cdil.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CMBTA06 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-236AA |
| CMBTA14 | TRANSISTOR | BJT | DARLINGTON | NPN | 300MA I(C) | TO-236AA |
| CMBTA55 | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 500MA I(C) | TO-236AA |
| CMBTA92 | TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 500MA I(C) | TO-236AA |
| CMBTA93 | TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 500MA I(C) | TO-236AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CMBTA06 | 功能描述:兩極晶體管 - BJT Si Planar Trans NPN,0.5A,80V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CMBTA06-T | 功能描述:兩極晶體管 - BJT NPN 0.5A 80V Gen Pur RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CMBTA06T/-W | 功能描述:兩極晶體管 - BJT NPN 0.5A 80V Gen Pur RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CMBTA13 | 功能描述:兩極晶體管 - BJT Darlington Trans SOT23,NPN,0.3A,30V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CMBTA13-T | 功能描述:達(dá)林頓晶體管 NPN 0.3A 30V Darling RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。