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參數(shù)資料
| 型號(hào)： | CMBD99 |
| 廠商： | Continental Device India Limited |
| 英文描述： | SILICON EPITAXIAL GENERAL SWITCHING DIODE |
| 中文描述： | 硅外延通用開關(guān)二極管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 197K |
| 代理商： | CMBD99 |
SILICON EPITAXIAL GENERAL SWITCHING DIODE
CMBD99
SOT-23
MARKING : C7
Silicon Epitaxial General Switching Double Diode Series.
ABSOLUTE MAXIMUM RATINGS (per diode)
DESCRIPTION
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Non- Repetitive Peak Forward Current t=1us
Peak Forward Current
Average Forward Current
Power Dissipation Ta=25 deg C
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (per diode) (Ta=25 deg C Unless otherwise noted)
DESCRIPTION
SYMBOL
VRM
VR
IFSM
IFM
IO
PT
Tj
Tstg
VALUE
35
30
4.0
300
100
150
125
-55 to +125
UNIT
V
V
A
mA
mA
mW
deg C
deg C
SYMBOL TEST CONDITION
MIN
TYP
MAX
UNIT
Reverse Voltage Leakage Current
Forward Voltage
IR
VF
VR=30V
IF=10mA
IF=50mA
IF=100mA
VR=0V, f=1MHz
-
-
-
-
-
-
-
-
-
-
100
1.0
1.2
1.4
4.0
nA
V
V
V
pF
Diode Capacitance
CD
3
Pin Configuration
1 = ANODE
2 =
3 =
CATHODE
CATHODE
ANODE/
1
2
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
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