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參數資料
| 型號： | CMBT6520 |
| 廠商： | Continental Device India Limited |
| 英文描述： | HIGH?VOLTAGE TRANSISTOR |
| 中文描述： | 高？電壓晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 129K |
| 代理商： | CMBT6520 |
Continental Device India Limited
Data Sheet
Page 1 of 3
HIGH–VOLTAGE TRANSISTOR
P–N–P transistor
Marking
CMBT6520 = 2Z
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation at T
amb
= 25°C
D.C. current gain
–I
C
= 10 mA; –V
CE
= 10 V
–V
CBO
–V
CEO
–V
EBO
–I
C
P
tot
max.
max.
max.
max.
max
350
350
V
V
V
mA
mW
5
500
225
h
FE
min.
30
RATINGS
(at T
A
= 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation at T
amb
= 25°C
Storage temperature
Junction temperature
–V
CBO
–V
CEO
–V
EBO
–I
C
P
tot
T
stg
Tj
max.
max.
max.
max.
max
350
350
V
V
V
mA
mW
°C
°C
5
500
225
–55 to +150
max.
150
CMBT 6520
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
2
1
SOT-23 Formed SMD Package
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
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