參數(shù)資料
型號(hào)： CM400DY-24A
廠商： Mitsubishi Electric Corporation
英文描述： HIGH POWER SWITCHING USE
中文描述： 大功率開關(guān)使用
文件頁數(shù)： 4/5頁
文件大?。?/td> 47K
代理商： CM400DY-24A
Mar. 2004
MITSUBISHI IGBT MODULES
CM400DY-24A
HIGH POWER SWITCHING USE
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
1
10
2
2
3
5
7
10
3
2
3
5
7
t
rr
I
rr
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT I
E
(A)
R
r
(
R
r
(
Conditions:
V
CC
= 600V
V
GE
=
±
15V
R
G
= 0.78
T
j
= 25
°
C
Inductive load
10
–
3
10
2
10
1
10
–
5
10
–
4
10
0
7
5
3
2
10
–
2
7
5
3
2
10
–
1
7
5
3
2
10
–
3
2 3 57
2 3 57
2 3 57
Single Pulse
T
C
’
= 25
°
C
Under the chip
2 3 57
10
1
10
–
2
10
–
1
10
0
10
–
3
10
–
3
5
3
2
10
–
2
5
3
2
10
–
1
2 3 57
2 3 57
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
N
T
t
–
c
’
)
(
TIME (s)
IGBT part:
Per unit base =
R
th(j
–
c)
= 0.046
°
C/W
FWDi part:
Per unit base =
R
th(j
–
c)
= 0.085
°
C/W
10
2
3
5
7
2
3
5
7
10
1
10
2
5
7
10
3
2
3
5
7
2
3
RECOVERY LOSS vs. I
E
(TYPICAL)
R
EMITTER CURRENT I
E
(A)
Conditions:
V
CC
= 600V
V
GE
=
±
15V
R
G
= 0.78
T
j
= 125
°
C
Inductive load
C snubber at bus
Err
10
2
10
1
10
2
3
5
7
2
3
5
7
10
1
10
2
5
7
10
3
2
3
5
7
2
3
SWITCHING LOSS vs.
COLLECTOR CURRENT
(TYPICAL)
S
COLLECTOR CURRENT I
C
(A)
Conditions:
V
CC
= 600V
V
GE
=
±
15V
R
G
= 0.78
T
j
= 125
°
C
Inductive load
C snubber at bus
Esw(off)
Esw(on)
10
2
10
1
10
0
2
3
5
7
2
3
5
7
10
–
1
10
0
5
7
10
1
2
3
5
7
2
3
RECOVERY LOSS vs.
GATE RESISTANCE
(TYPICAL)
R
GATE RESISTANCE R
G
(
)
Conditions:
V
CC
= 600V
V
GE
=
±
15V
I
E
= 400A
T
j
= 125
°
C
Inductive load
C snubber at bus
Err
10
3
10
2
10
1
2
3
5
7
2
3
5
7
10
–
1
10
0
5
7
10
1
2
3
5
7
2
3
SWITCHING LOSS vs.
GATE RESISTANCE
(TYPICAL)
S
GATE RESISTANCE R
G
(
)
Conditions:
V
CC
= 600V
V
GE
=
±
15V
I
C
= 400A
T
j
= 125
°
C
Inductive load
C snubber at bus
Esw(off)
Esw(on)
相關(guān)PDF資料
PDF描述
CM400HA-24 5 AMP SUBMINIATURE POWER RELAY
CM4001 Analog IC
CM400DU-24H TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 400A I(C)
CM400DY66H TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C)
CM400HA12E TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 400A I(C)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CM400DY-24A_09 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE
CM400DY-24H 制造商:n/a 功能描述:_
CM400DY-24NF 功能描述:IGBT MOD DUAL 1200V 400A NF SER RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
CM400DY-24NF_09 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE
CM400DY-34A 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE DUAL 400A 1700V 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.7KV, 400A; Transistor Polarity:Dual N Channel; DC Collector Current:400A; Collector Emitter Voltage Vces:1.7kV; Power Dissipation Pd:3.78kW; Operating Temperature Min:-40C; Operating Temperature Max:150C ;RoHS Compliant: Yes 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR
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