參數(shù)資料
型號(hào)： CM400DY-24A
廠商： Mitsubishi Electric Corporation
英文描述： HIGH POWER SWITCHING USE
中文描述： 大功率開關(guān)使用
文件頁數(shù)： 2/5頁
文件大小： 47K
代理商： CM400DY-24A
Mar. 2004
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25
°
C
T
j
= 125
°
C
V
CC
= 600V, I
C
= 400A, V
GE
= 15V
V
CC
= 600V, I
C
= 400A
V
GE1
= V
GE2
= 15V
R
G
= 0.78
, Inductive load switching operation
I
E
= 400A
I
E
= 400A, V
GE
= 0V
IGBT part (1/2 module)
*1
FWDi part (1/2 module)
*1
Case to fin, Thermal compound Applied (1/2 module)
*2
I
C
= 40mA, V
CE
= 10V
I
C
= 400A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
1200
±
20
400
800
400
800
2710
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
580
MITSUBISHI IGBT MODULES
CM400DY-24A
HIGH POWER SWITCHING USE
V
V
A
A
W
°
C
°
C
V
N m
g
1
0.5
3.0
—
70
6
1.4
—
550
180
600
350
250
—
3.8
0.046
0.085
—
10
mA
μ
A
nF
nC
ns
μ
C
V
°
C/W
—
—
2.1
2.4
—
—
—
2000
—
—
—
—
—
16
—
—
—
0.02
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.78
7
V
V
6
8
ns
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (
Note 1
)
Q
rr (
Note 1
)
V
EC(
Note 1
)
R
th(j-c)
Q
R
th(j-c)
R
R
th(c-f)
R
G
*
1 : Tc, Tf measured point is just under the chips.
*
2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
Note 1. I
E
, V
EC
, t
rr
& Q
rr
represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150
°
C.
Symbol
Parameter
V
GE(th)
V
CE(sat)
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
G-E Short
C-E Short
DC, T
C
= 85
°
C
*1
Pulse
(Note 2)
Pulse
T
C
= 25
°
C
*1
(Note 2)
Main terminal to base plate, AC 1 min.
Main terminal M6
Mounting holes M6
Typical value
Symbol
V
CES
V
GES
I
C
I
CM
I
E (
Note 1
)
I
EM (
Note 1
)
P
C (
Note 3
)
T
j
T
stg
V
iso
—
—
—
Parameter
Collector current
Emitter current
Torque strength
Conditions
Unit
Ratings
Unit
Typ.
Limits
Min.
Max.
Test conditions
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C)
ABSOLUTE MAXIMUM RATINGS
(Tj = 25
°
C)
Collector cutoff current
Gate-emitter threshold
voltage
Gate leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
External gate resistance
Thermal resistance
相關(guān)PDF資料
PDF描述
CM400HA-24 5 AMP SUBMINIATURE POWER RELAY
CM4001 Analog IC
CM400DU-24H TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 400A I(C)
CM400DY66H TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C)
CM400HA12E TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 400A I(C)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CM400DY-24A_09 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE
CM400DY-24H 制造商:n/a 功能描述:_
CM400DY-24NF 功能描述:IGBT MOD DUAL 1200V 400A NF SER RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
CM400DY-24NF_09 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE
CM400DY-34A 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE DUAL 400A 1700V 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.7KV, 400A; Transistor Polarity:Dual N Channel; DC Collector Current:400A; Collector Emitter Voltage Vces:1.7kV; Power Dissipation Pd:3.78kW; Operating Temperature Min:-40C; Operating Temperature Max:150C ;RoHS Compliant: Yes 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR
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