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參數(shù)資料
| 型號： | CM150E3U-12H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 大功率開關(guān)使用絕緣型 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 50K |
| 代理商： | CM150E3U-12H |
Sep.1998
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
°
C/W
°
C/W
°
C/W
°
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
Q
R
th(j-c)
D
R
th(j-c)
R
th(c-f)
Per IGBT
–
–
0.21
Thermal Resistance, Junction to Case
Per FWDi
–
–
0.47
Thermal Resistance, Junction to Case
Clamp Diode Part
–
–
0.47
Contact Thermal Resistance
Per Module, Thermal Grease Applied
–
0.035
–
MITSUBISHI IGBT MODULES
CM150E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
C
C
,
OUTPUT CHARACTERISTICS
(TYPICAL)
0
2
4
6
8
10
200
100
50
0
V
GE
= 20V
15
13
12
11
8
T
j
= 25
o
C
150
250
300
10
9
14
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
C
,
TRANSFER CHARACTERISTICS
(TYPICAL)
0
4
8
12
16
20
200
100
50
0
150
250
300
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
COLLECTOR-CURRENT, I
C
, (AMPERES)
C
S
C
,
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
0
50
100
150
250
200
4
3
2
1
0
300
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
S
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T
j
= 25°C
0
4
8
12
16
20
8
6
4
2
0
I
C
= 60A
I
C
= 300A
I
C
= 150A
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
C
i
,
o
,
r
,
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
V
GE
= 0V
10
1
C
ies
C
oes
C
res
0.6
1.0
1.4
1.8
2.6
2.2
3.0
10
1
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
3
E
E
,
T
j
= 25°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CM150E3U-12H | Chopper IGBTMOD 150 Amperes/600 Volts |
| CM150E3U-24H | HIGH POWER SWITCHING USE INSULATED TYPE |
| CM150E3U-24H | Chopper IGBTMOD 150 Amperes/1200 Volts |
| CM150TF-12H | 122 x 32 pixel format, LED Backlight available |
| CM150TF-12H | 122 x 32 pixel format, LED Backlight available |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CM150E3U-12H_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
| CM150E3U-24F | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE |
| CM150E3U-24H | 功能描述:IGBT MOD CHOP 1200V 150A U SER RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| CM150E3U-24H_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
| CM150E3Y12E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 150A I(C) |
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