參數(shù)資料
型號(hào)： CM150E3U-12H
廠商： Mitsubishi Electric Corporation
英文描述： HIGH POWER SWITCHING USE INSULATED TYPE
中文描述： 大功率開關(guān)使用絕緣型
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 50K
代理商： CM150E3U-12H
Sep.1998
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings
Symbol
CM150E3U-12H
Units
°
C
°
C
Junction Temperature
T
j
-40 to 150
Storage Temperature
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
-40 to 125
Collector-Emitter Voltage (G-E SHORT)
600
Volts
Gate-Emitter Voltage (C-E SHORT)
±
20
Volts
Collector Current (T
c
= 25
°
C)
Peak Collector Current
150
Amperes
300*
150
Amperes
Emitter Current** (T
c
= 25
°
C)
Peak Emitter Current**
Amperes
300*
Amperes
Maximum Collector Dissipation (T
c
= 25
°
C, T
j
≤
150
°
C)
Mounting Torque, M5 Main Terminal
600
Watts
2.5~3.5
N · m
Mounting Torque, M6 Mounting
–
3.5~4.5
N · m
Weight
–
310
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Vrms
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
I
GES
V
GE(th)
V
CE(sat)
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 15mA, V
CE
= 10V
I
C
= 150A, V
GE
= 15V, T
j
= 25
°
C
I
C
= 150A, V
GE
= 15V, T
j
= 125
°
C
V
CC
= 300V, I
C
= 150A, V
GE
= 15V
I
E
= 150A, V
GE
= 0V
I
F
= 150A, Clamp Diode Part
–
–
1
mA
Gate Leakage Voltage
–
–
0.5
μ
A
Volts
Gate-Emitter Threshold Voltage
4.5
6
7.5
Collector-Emitter Saturation Voltage
–
2.4
3.0
Volts
–
2.6
–
Volts
Total Gate Charge
Q
G
V
EC
V
FM
–
300
–
nC
Emitter-Collector Voltage**
–
–
2.6
Volts
Emitter-Collector Voltage
–
–
2.6
Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
t
rr
Q
rr
–
–
13.2
nF
Output Capacitance
V
CE
= 10V, V
GE
= 0V
–
–
7.2
nF
Reverse Transfer Capacitance
–
–
2
nF
Resistive
Turn-on Delay Time
V
CC
= 300V, I
C
= 150A,
V
GE1
= V
GE2
= 15V,
R
G
= 4.2
, Resistive
Load Switching Operation
–
–
100
ns
Load
Rise Time
–
–
350
ns
Switch
Turn-off Delay Time
–
–
300
ns
Times
Fall Time
–
–
300
ns
Diode Reverse Recovery Time**
I
E
= 150A, di
E
/dt = -300A/
μ
s
I
E
= 150A, di
E
/dt = -300A/
μ
s
I
F
= 150A, Clamp Diode Part
di
F
/dt = -300A/
μ
s
–
–
160
ns
Diode Reverse Recovery Charge**
–
0.36
–
μ
C
ns
Diode Reverse Recovery Time
–
–
160
Diode Reverse Recovery Charge
–
0.36
–
μ
C
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
MITSUBISHI IGBT MODULES
CM150E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
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