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參數(shù)資料
| 型號(hào)： | CM1200HC-66H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 大功率開關(guān)使用絕緣型 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 53K |
| 代理商： | CM1200HC-66H |
PRELIMINARY
Some parametric limits are subject to change.
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Mar. 2001
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
7
5
3
2
7 10
2
10
0
7
5
2 3
5 7 10
3
2 3
5
5
3
2
10
1
5
7
5
3
2
7 10
2
10
–
1
7
5
2 3
5 7 10
3
2 3
5
5
3
2
10
0
5
t
d(off)
V
CC
= 1650V, V
GE
=
±
15V
R
G
= 1.6
, T
j
= 125
°
C
Inductive load
t
d(on)
t
f
t
r
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
S
μ
s
COLLECTOR CURRENT I
C
(A)
V
CC
= 1650V, T
j
= 125
°
C
Inductive load
V
GE
=
±
15V, R
G
= 1.6
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
R
r
μ
s
EMITTER CURRENT I
E
(A)
R
r
7
5
3
2
10
2
7
5
5
3
2
10
3
10
–
2
10
–
3
10
–
2
10
–
1
10
0
7
5
3
2
10
–
1
7
5
3
2
10
0
10
1
7
5
3
2
2 3 5 7
2 3 5 7
2 3 5 7
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
N
T
t
–
TIME (s)
10
–
2
10
–
3
10
–
2
10
–
1
10
0
7
5
3
2
10
–
1
7
5
3
2
10
0
10
1
7
5
3
2
2 3 5 7
2 3 5 7
2 3 5 7
N
T
t
–
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
Single Pulse
T
C
= 25
°
C
R
th(j
–
c)
= 0.010K/W
Single Pulse
T
C
= 25
°
C
R
th(j
–
c)
= 0.020K/W
20
16
12
8
4
0
20000
15000
0
5000
10000
V
GE
– GATE CHARGE
(TYPICAL)
G
G
GATE CHARGE Q
G
(nC)
V
CC
= 1650V
I
C
= 1200A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CM1200HC-66H_05 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM1200HC-66H_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM1200HC-90R | 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
| CM1200HCB-34N | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM1200HG-66H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
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