參數(shù)資料
型號: CM1200HC-66H
廠商: Mitsubishi Electric Corporation
英文描述: HIGH POWER SWITCHING USE INSULATED TYPE
中文描述: 大功率開關(guān)使用絕緣型
文件頁數(shù): 3/4頁
文件大?。?/td> 53K
代理商: CM1200HC-66H
PRELIMINARY
Some parametric limits are subject to change.
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Mar. 2001
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
10
1
2 3
10
1
5 710
0
2 3 5 710
1
2 3 5 710
2
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
CAPACITANCE VS. V
CE
(TYPICAL)
C
i
,
o
,
r
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
V
GE
= 0V, T
j
= 25
°
C
C
ies,
C
oes
: f = 100kHz
C
res
: f = 1MHz
OUTPUT CHARACTERISTICS
(TYPICAL)
C
C
TRANSFER CHARACTERISTICS
(TYPICAL)
C
C
GATE-EMITTER VOLTAGE V
GE
(V)
C
S
C
COLLECTOR CURRENT I
C
(A)
E
E
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
2400
800
400
0
20
0
4
8
12
1200
16
2000
1600
0
8
6
4
2
2400
0
400
800
1600
1200
2000
0
5
4
3
2
1
10
2
10
4
7
5
3
2
10
3
7
5
3
2
7
5
3
2
10
1
0
400
800
1200
1600
2000
2400
10
0
2
4
6
8
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
T
j
= 25
°
C
V
GE
= 20V
V
GE
= 14V
V
GE
= 13V
V
GE
= 12V
V
GE
= 11V
V
GE
= 10V
V
GE
= 9V
V
GE
= 8V
V
GE
= 15V
V
CE
= 10V
T
j
= 25
°
C
T
j
= 125
°
C
V
GE
= 15V
T
j
= 25
°
C
T
j
= 125
°
C
T
j
= 25
°
C
COLLECTOR-EMITTER SATURATION VOLTAGE V
CE(sat)
(V)
0
20
16
12
8
4
10
8
6
4
2
0
C
S
C
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
T
j
= 25
°
C
相關(guān)PDF資料
PDF描述
CM1203 1, 2 and 3-Channel ESD Arrays in CSP
CM1203-01CP 1, 2 and 3-Channel ESD Arrays in CSP
CM1203-01CS 1, 2 and 3-Channel ESD Arrays in CSP
CM1203-02CP 1, 2 and 3-Channel ESD Arrays in CSP
CM1203-02CS 1, 2 and 3-Channel ESD Arrays in CSP
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