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參數資料
| 型號： | CM10MD1-12H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
| 中文描述： | 中功率開關使用平面性基地型，絕緣型 |
| 文件頁數： | 5/5頁 |
| 文件大?。?/td> | 144K |
| 代理商： | CM10MD1-12H |
Feb.1999
10
1
10
–3
10
–5
10
–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
7
5
3
2
10
–3
2 3 57
Single Pulse
T
f
= 25°C
R
th(j – f)
= 3.5°C/W
2 3 57
2 3 57
2 3 57
10
1
10
–2
10
–1
10
0
10
–3
10
–3
7
5
3
2
10
–2
7
5
3
10
–1
3
2
2 3 57
2 3 57
10
1
10
–3
10
–5
10
–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
7
5
3
2
10
–3
2 3 57
Single Pulse
T
f
= 25°C
R
th(j – f)
= 4.0°C/W
2 3 57
2 3 57
2 3 57
10
1
10
–2
10
–1
10
0
10
–3
10
–3
7
5
3
2
10
–2
7
5
3
10
–1
3
2
2 3 57
2 3 57
10
10
3
7
5
3
2
10
0
2
3
5 7
10
1
10
2
7
5
3
2
2
3
5 7
10
2
t
d(off)
V
CC
= 300V
V
GE
= ±15V
R
G
= 63
T
j
= 125°C
t
d(on)
t
f
t
r
10
1
10
3
7
5
3
2
10
–1
2
3
5 7
10
0
10
2
7
5
3
2
2
3
5 7
10
1
10
–1
10
1
7
5
3
2
10
0
7
5
3
2
–di/dt = 20A / μs
T
j
= 25°C
t
rr
I
rr
20
16
12
8
4
0
50
0
10
20
30
40
18
14
10
6
2
V
CC
= 200V
V
CC
= 300V
I
C
= 10A
N
T
t
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
S
COLLECTOR CURRENT I
C
(A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
R
r
(
EMITTER CURRENT I
E
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
N
T
t
TIME (s)
TIME (s)
V
GE
– GATE CHARGE
(TYPICAL)
G
G
(
GATE CHARGE Q
G
(nC)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
R
r
(
MITSUBISHI IGBT MODULES
CM10MD1-12H
MEDIUM POWER SWITCHING USE
FLAT-BASE TYPE, INSULATED TYPE
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