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參數(shù)資料
| 型號： | CM10MD1-12H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
| 中文描述： | 中功率開關(guān)使用平面性基地型，絕緣型 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 144K |
| 代理商： | CM10MD1-12H |
Feb.1999
20
16
12
8
4
0
20
10
2
0
4
6
8
12 14 16 18
V
CE
= 10V
T
j
= 25
°
C
T
j
= 125
°
C
5
4
3
2
1
0
20
0
4
8
12
16
T
j
= 25
°
C
T
j
= 125
°
C
V
GE
= 15V
10
0
10
2
7
5
3
2
0
0.8
1.6
10
1
7
5
3
2
2.4
3.2
4.0
T
j
= 25
°
C
20
16
12
8
4
0
10
5
1
0
2
3
4
6
7
8
9
V
GE
=20
(V)
T
j
=25
°
C
9
15
12
11
10
8 7
10
8
6
4
2
0
20
10
2
0
4
6
8
12 14 16 18
9
7
5
3
1
T
j
= 25
°
C
I
C
= 20A
I
C
= 10A
I
C
= 4A
10
–1
2 3
10
–1
5 7
10
0
2 3
5 7
10
1
2 3
5 7
10
2
10
1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
10
–2
C
ies
V
GE
= 0V
C
oes
C
res
OUTPUT CHARACTERISTICS
(TYPICAL)
C
C
(
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
C
C
(
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
C
S
C
(
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISITICS
(TYPICAL)
E
E
(
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCE VS. V
CE
(TYPICAL)
C
i
,
o
,
r
(
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
C
S
C
(
MITSUBISHI IGBT MODULES
CM10MD1-12H
MEDIUM POWER SWITCHING USE
FLAT-BASE TYPE, INSULATED TYPE
PERFORMANCE CURVES
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