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參數(shù)資料
| 型號： | CM100DU-24F |
| 廠商： | POWEREX INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts |
| 中文描述： | 100 A, 1200 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 104K |
| 代理商： | CM100DU-24F |
1
Trench Gate Design
Dual IGBTMOD
100 Amperes/1200 Volts
CM100DU-24F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Dimensions
A
Inches
3.70
Millimeters
94.0
B
1.89
48.0
C
1.18 +0.04/-0.02 30.0 +1.0/-0.5
D
3.15
±
0.01
80.0
±
0.25
E
0.43
11.0
F
0.16
4.0
G
0.71
18.0
H
0.02
0.5
Dimensions
J
Inches
0.53
Millimeters
13.5
K
0.91
23.0
L
1.13
28.7
M
0.67
17.0
N
0.28
7.0
P
M5
M5
Q
0.2
6 Dia.
6.5
Dia.
R
0.16
4.0
Description:
Powerex IGBTMOD Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each tran-
sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
□
Low Drive Power
□
Low V
CE(sat)
□
Discrete Super-Fast Recovery
Free-Wheel Diode
□
Isolated Baseplate for Easy
Heat Sinking
Applications:
□
AC Motor Control
□
UPS
□
Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100DU-24F is a
1200V (V
CES
), 100 Ampere Dual
IGBTMOD Power Module.
Current Rating
Amperes
100
V
CES
Type
CM
Volts (x 50)
24
Q (2 PLACES)
C
A
D
B
C
R
K
K
C2E1
E2
C1
H
M
N
E
F
G
F
J
L
E
G
C2E1
RTC
E2
E1
G1
C1
E2
G2
RTC
P - NUTS (3 PLACES)
TC MEASPOINT
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CM100DU-34KA | LED 5MM VERT LOW CUR YELLOW PCMT |
| CM100DY-24A | Dual IGBTMOD A-Series Module 100 Amperes/1200 Volts |
| CM100DY-28H | Dual IGBTMOD 100 Amperes/1400 Volts |
| CM100TF-24H | 122 x 32 pixel format, LED Backlight available |
| CM100TJ-12F | 128 x 64 pixel format, LED or EL Backlight available |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CM100DU-24F_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM100DU-24F_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE |
| CM100DU-24H | 功能描述:IGBT MOD DUAL 1200V 100A U SER RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| CM100DU-24H_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
| CM100DU-24H_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
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