參數(shù)資料
型號: CM100DY-24A
廠商: POWEREX INC
元件分類: IGBT 晶體管
英文描述: Dual IGBTMOD A-Series Module 100 Amperes/1200 Volts
中文描述: 100 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-7
文件頁數(shù): 1/4頁
文件大?。?/td> 243K
代理商: CM100DY-24A
1
Dual IGBTMOD
A-Series Module
100 Amperes/1200 Volts
CM100DY-24A
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A
3.70
94.0
B
1.89
48.0
C
1.14+0.004/-0.02 29.0+0.1/-0.5
D
3.15±0.01
80.0±0.25
E
0.67
17.0
F
0.91
23.0
G
0.16
4.0
H
0.71
18.0
J
0.51
13.0
K
0.47
12.0
Description:
Powerex IGBTMOD Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
UPS
Battery Powered Supplies
Ordering Information:
Example: Select the complete
part module number you
desire from the table below -i.e.
CM100DY-24A is a 1200V (VCES),
100 Ampere Dual IGBTMOD
Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM
100
24
Dimensions
Inches
Millimeters
L
0.26 Dia.
Dia. 6.5
M
M5 Metric
M5
N
0.79
20.0
P
0.63
16.0
Q
0.28
7.0
R
0.83
21.2
S
0.30
7.5
T
0.02
0.5
U
0.110
2.8
V
0.16
4.0
A
E
E
F
F
B
N
L
(2 PLACES)
D
M NUTS
(3 PLACES)
J
G
G
H
K
K
K
P
P
P
T THICK
U WIDTH
Q
Q
V
C
S
R
G2
E2
E1
G1
C1
E2
C2E1
LABEL
C2E1
E2
C1
G2
E2
E1
G1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CM100DY-24A_09 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE
CM100DY24E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C)
CM100DY24H 制造商:MIT 功能描述:_ 制造商:MITSUBISHI 功能描述:CM100DY-24H
CM100DY-24H 功能描述:IGBT MOD DUAL 1200V 100A H SER RoHS:否 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
CM100DY-24NF 功能描述:IGBT MOD DUAL 1200V 100A NF SER RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B