參數(shù)資料
型號(hào): CLY38
廠商: INFINEON TECHNOLOGIES AG
英文描述: HiRel C-Band GaAs Power-MESFET
中文描述: 伊雷爾C波段砷化鎵功率場效應(yīng)管
文件頁數(shù): 4/9頁
文件大?。?/td> 581K
代理商: CLY38
CLY38
S emiconductor Group
4 of 10
Draft D, S eptember 99
Electrical Characteristics
(continued)
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Linear power gain
1)
V
DS
= 9 V, I
D
= 1400 mA, f = 2.3 GHz,
P
in
= 0 dBm
G
lp
dB
CLY38-00
10.0
11.0
-
CLY38-05
10.5
11.2
-
CLY38-10
10.5
11.2
-
Output power at 1dB gain compr.
1)
V
DS
= 9 V, I
D(RF off)
= 1400 mA, f = 2.3 GHz
P
1dB
dBm
CLY38-00
37.5
37.8
-
CLY38-05
38
38.3
-
CLY38-10
38.5
38.8
-
Output power
1)
V
DS
= 9 V, I
D(RF off)
= 1400 mA,
f = 2.3 GHz, P
in
= 28 dBm
P
out
dBm
CLY38-00
-
37.8
-
CLY38-05
-
38.3
-
CLY38-10
-
38.8
-
Power added efficiency
1), 2)
V
DS
= 9 V, I
D(RF off)
= 1400 mA,
f = 2.3 GHz, @ 1dB gain compression
PAE
%
CLY38-00
40
47
-
CLY38-05
45
50
-
CLY38-10
45
53
-
Notes.:
1) RF Power characteristics given for power matching conditions
2) Power added efficiency: PAE = (P
RFout
- P
RFin
) / P
DC
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CLY38-00 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel C-Band GaAs Power-MESFET
CLY38-05 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel C-Band GaAs Power-MESFET
CLY38-10 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel C-Band GaAs Power-MESFET
CL-Y-42.5X42.5 制造商:MALICO 功能描述:CLIP MBH42.5 3-3.6MM PK5
CLY5 功能描述:射頻GaAs晶體管 GaAs Power MMIC RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: