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參數(shù)資料
| 型號(hào)： | CGY2032TS |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 無繩電話/電話 |
| 英文描述： | DECT 500 mW power amplifier(DECT 500 mW 功率放大器) |
| 中文描述： | TELECOM, CORDLESS, SUPPORT CIRCUIT, PDSO16 |
| 封裝： | 4.40 MM , PLASTIC, SOT-369-1, SSOP-16 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大小： | 60K |
| 代理商： | CGY2032TS |
1999 Jul 21
4
Philips Semiconductors
Product specification
DECT 500 mW power amplifier
CGY2032TS
HANDLING
Do not operate or store near strong electrostatic fields. Meets class 1 ESD test requirements [Human Body Model
(HBM)], in accordance with “MIL STD 883C - method 3015”
THERMAL CHARACTERISTICS
Note
1.
On Philips evaluation board, R
th(j-a)
value is typically 80 K/W.
DC CHARACTERISTICS
T
amb
= 25
°
C; unless otherwise specified.
AC CHARACTERISTICS
V
DD
= 3.2 V; f
RF
= 1900 MHz; P
i
= 0 dBm; T
amb
= 25
°
C; duty factor
δ
= 50%; 50
impedance system; measured and
guaranteed on the CGY2032TS evaluation board; the circuit diagram is shown in Fig.5.
Note
1.
The device is adjusted to provide nominal value of load power into a 50
load. The device is switched off and a 6 : 1
load replaces the 50
load. The device is switched on and the phase of the 6 : 1 load is varied
360 electrical degrees during a 60 seconds test period.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
in free air; note 1
145
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Pins V
DD1
, V
DD2
and V
DD3
V
DD
I
DD
positive supply voltage
positive peak supply current
1.8
3.2
4.2
800
V
mA
V
DD
= 3.2 V
SYMBOL
PARAMETER
CONDITIONS
MIN.
5
26.5
TYP.
MAX.
UNIT
P
i
δ
P
o
I
DD
η
P
leak
H2
H3
Stab
input power
duty factor
output power
total drain current
efficiency
RF leakage to output in power off state
second harmonic level
third harmonic level
stability (spurious levels)
0
50
27.5
55
40
60
+5
100
29
500
35
30
35
dBm
%
dBm
mA
%
dBm
dBc
dBc
dBc
V
DD
= 0 V
note 1
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