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參數(shù)資料
| 型號： | CGY2032TS |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 無繩電話/電話 |
| 英文描述： | DECT 500 mW power amplifier(DECT 500 mW 功率放大器) |
| 中文描述： | TELECOM, CORDLESS, SUPPORT CIRCUIT, PDSO16 |
| 封裝： | 4.40 MM , PLASTIC, SOT-369-1, SSOP-16 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 60K |
| 代理商： | CGY2032TS |
1999 Jul 21
2
Philips Semiconductors
Product specification
DECT 500 mW power amplifier
CGY2032TS
FEATURES
Power Amplifier (PA) overall efficiency 55%
27.5 dBm saturated output power at 3.2 V
0 dBm input power
40 dB linear gain
Operation without negative supply
Wide operating temperature range
30 to +85
°
C
SSOP16 package.
APPLICATIONS
1.88 to 1.9 GHz transceivers for DECT applications
2 GHz transceivers [Personal Handy phone System
(PHS), Digital Cellular System (DCS) and Personal
Communication Services (PCS)].
GENERAL DESCRIPTION
The CGY2032TS is a GaAs Monolithic Microwave
Integrated Circuit (MMIC) power amplifier specifically
designed to operate from 3.6 V battery supply.
No negative supply voltage is required for operation.
QUICK REFERENCE DATA
Note
1.
For conditions, see Chapters “AC characteristics” and “DC characteristics”.
ORDERING INFORMATION
BLOCK DIAGRAM
SYMBOL
PARAMETER
(1)
MIN.
30
TYP.
MAX.
+85
UNIT
V
DD
I
DD
P
o
T
amb
positive supply voltage
positive peak supply current
output power
ambient temperature
3.2
350
27.5
V
mA
dBm
°
C
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
CGY2032TS
SSOP16
plastic shrink small outline package; 16 leads; body width 4.4 mm
SOT369-1
Fig.1 Block diagram.
handbook, halfpage
MGK735
10
6, 7
2, 3, 4
12, 13, 14
11
8
5
16
15
1
RFI
VDD1
GND1
GND2 GND3
VDD2VDD3
RFO
OPM
CGY2032TS
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