- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374147 > CGY2014ATW (NXP SEMICONDUCTORS) GSM/DCS/PCS power amplifier PDF資料下載
參數(shù)資料
| 型號： | CGY2014ATW |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | GSM/DCS/PCS power amplifier |
| 中文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | PLASTIC, HTSSOP-20 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 73K |
| 代理商： | CGY2014ATW |
2000 Nov 28
6
Philips Semiconductors
Preliminary specification
GSM/DCS/PCS power amplifier
CGY2014ATW
AC CHARACTERISTICS
V
DD1
= 2.8 V; V
DD2
= V
DD3
= 3.5 V; T
amb
= 25
°
C; measured on the Philips application diagram (see Fig.3).
Notes
1.
The device is adjusted to provide nominal load power into a 50
load. The device is switched off and a 6 : 1 load
replaces the 50
load. The device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees
during a 60 seconds test period.
The power amplifier can be matched to PCS and/or DCS/PCS operation through optimization of the matching circuit;
see Application Note(tbf).
Isolation can be improved to
20 dBm (typical) with a pin diode switched in the DCS output matching circuit.
2.
3.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Low band: GSM power amplifier
P
i(LB)
f
RF(LB)
P
o(LB)(max)
η
LB
P
o(LB)(min)
N
RX(LB)
input power
RF frequency range
maximum output power
efficiency
minimum output power
output noise in RX band
3
880
34.5
50
5
35
55
30
7
915
dBm
MHz
dBm
%
dBm
V
DD
= 0 V; P
i(LB)
= 5 dBm
P
i(LB)
= 5 dBm
f
RF
= 925 to 935 MHz
f
RF
= 935 to 960 MHz
P
i(LB)
= 5 dBm
P
i(LB)
= 5 dBm
P
i(LB)
= 5 dBm; note 1
117
129
35
35
60
dBm/Hz
dBm/Hz
dBc
dBc
dBc
H2
LB
H3
LB
Stab
LB
High band: DCS/PCS power amplifier;
note 2
2nd harmonic level
3rd harmonic level
stability
P
i(HB)
f
RF(HB)
P
o(HB)(max)
η
HB
P
o(HB)(min)
α
HB
input power
RF frequency range
maximum output power
efficiency
minimum output power
high band isolation when
low band is operating
3
1710
32
38
5
32.5
40
30
0
7
1785
dBm
MHz
dBm
%
dBm
dBm
for DCS operation
V
DD
= 0 V; P
i(HB)
= 5 dBm
V
DD(LB)
= 3.5 V; P
i(LB)
= 5 dBm;
V
DD(HB)
= 0 V; P
i(HB)
= 5 dBm;
note 3
P
i(HB)
= 5 dBm
P
i(HB)
= 5 dBm
P
i(HB)
= 5 dBm
P
i(HB)
= 5 dBm; note 1
N
RX(HB)
H2
HB
H3
HB
Stab
HB
output noise in RX band
2nd harmonic level
3rd harmonic level
stability
121
35
35
60
dBm/Hz
dBc
dBc
dBc
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CGY2021G | DCS/PCS 2 W power amplifier |
| CGY2030M | DECT 500 mW power amplifier |
| CGY2105 | High dynamic range dual LNA MMIC |
| CGY2105ATS | High dynamic range dual LNA MMIC |
| CGY2106TS | High dynamic range dual LNA MMIC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CGY2014TT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MICROWAVE/MILLIMETER WAVE AMPLIFIER|DUAL|GAAS|TSSOP|20PIN|PLASTIC |
| CGY2020G | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Microwave/Millimeter Wave Amplifier |
| CGY2021G | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:DCS/PCS 2 W power amplifier |
| CGY2021GBE-S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Microwave/Millimeter Wave Amplifier |
| CGY2021GBE-T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Microwave/Millimeter Wave Amplifier |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。