參數(shù)資料
型號: CGY2014
廠商: NXP Semiconductors N.V.
英文描述: GSM/DCS/PCS power amplifier
中文描述: 的GSM / DCS / PCS的功率放大器
文件頁數(shù): 2/12頁
文件大?。?/td> 73K
代理商: CGY2014
2000 Nov 28
2
Philips Semiconductors
Preliminary specification
GSM/DCS/PCS power amplifier
CGY2014ATW
FEATURES
Operates at 3.6 V battery supply voltage
Power Amplifier (PA) output power:
35 dBm in GSM band and 32.5 dBm in DCS/PCS band
Input power: 5 dBm in GSM band and DCS/PCS band
Wide operating temperature range from
T
amb
=
20 to +85
°
C
HTSSOP20 exposed die pad package.
APPLICATIONS
Dual-band systems: Low Band (LB) from
880 to 915 MHz hand-held transceivers for E-GSM and
High Band (HB) from 1710 to 1910 MHz for DCS/PCS
applications.
GENERAL DESCRIPTION
The CGY2014ATW is a dual-band GSM/DCS/PCS GaAs
Monolithic Microwave Integrated Circuit (MMIC) power
amplifier. The circuit is specifically designed to operate at
3.6 V battery supply voltage.
The power amplifier requires only a 30 dB harmonic
low-pass filter to comply with the transmit spurious
specification.
The voltages applied on pins V
DD
(drain) control the power
of the power amplifier and enable it to be switched off.
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL
PARAMETER
MIN.
34.5
32
20
TYP.
MAX.
UNIT
V
DD
I
DD(LB)
P
o(LB)(max)
I
DD(HB)
P
o(HB)(max)
T
amb
supply voltage
GSM positive peak supply current
maximum output power in GSM band
DCS/PCS positive peak supply current
maximum output power in DCS/PCS band
ambient temperature
3.5
2
35
1.5
32.5
5.2
+85
V
A
dBm
A
dBm
°
C
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
CGY2014ATW
HTSSOP20
plastic, heatsink thin shrink small outline package; 20 leads;
body width 4.4 mm
SOT527-1
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