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參數(shù)資料
| 型號： | CGH35015F |
| 廠商： | CREE INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX |
| 中文描述： | S BAND, GaN, N-CHANNEL, RF POWER, HEMFET |
| 封裝： | ROHS COMPLIANT PACKAGE-2 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 720K |
| 代理商： | CGH35015F |
2
CGH3505F Rev .6 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
Copyright 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature
Parameter
Symbol
Rating
Units
Drain-Source Voltage
V
DSS
V
GS
T
STG
T
J
84
Volts
Gate-to-Source Voltage
-10, +2
Volts
Storage Temperature
-55, +150
C
Operating Junction Temperature
175
C
Thermal Resistance, Junction to
Case
1
R
θ
JC
5.0
C/W
Note:
1
Measured for the CGH35015F at P
DISS
= 14W.
Electrical Characteristics (T
C
= 25C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics
Gate Threshold Voltage
V
GS(th)
-3.0
-2.5
-1.8
VDC
V
DS
= 10 V, I
D
= 3.6 mA
Gate Quiescent Voltage
V
GS(Q)
–
-2.4
–
VDC
V
DS
= 28 V, I
D
= 60 mA
Saturated Drain Current
I
DS
2.4
2.7
–
A
V
DS
= 6.0 V, V
GS
= 2.0 V
Drain-Source Breakdown Voltage
V
(BR)DSS
84
100
–
VDC
V
GS
= -8 V, I
D
= 3.6 mA
Case Operating Temperature
T
C
-10
–
+105
C
Screw Torque
T
–
–
60
in-oz
Reference 440166 Package Revision 3
RF Characteristics
2,3
(T
C
= 25
C, F
0
= 3.5 GHz unless otherwise noted)
Small Signal Gain
G
SS
11
12
-
dB
V
DD
= 28 V, I
DQ
= 60 mA
Drain Efficiency
1
η
22
24
–
%
V
DD
= 28 V, I
DQ
= 60 mA, P
AVE
= 2.0 W
Back-Off Error Vector Magnitude
EVM
1
–
2.5
-
%
V
DD
= 28 V, I
DQ
= 60 mA, P
AVE
= 18 dBm
Error Vector Magnitude
EVM
2
–
2.0
-
%
V
DD
= 28 V, I
DQ
= 60 mA, P
AVE
= 2.0 W
Output Mismatch Stress
VSWR
-
10 : 1
-
Y
No damage at all phase angles,
V
DD
= 28 V, I
DQ
= 60 mA,
P
AVE
= 2.0 W
Dynamic Characteristics
Input Capacitance
C
GS
–
5.00
–
pF
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
Output Capacitance
C
DS
–
1.32
–
pF
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
Feedback Capacitance
C
GD
–
0.43
–
pF
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
Notes:
1
Drain Efficiency = P
/ P
2
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of
59, Coding Type RS-CC, Coding Rate Type 2/3.
3
Measured in the CGH35015F-TB test fixture.
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