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參數(shù)資料
| 型號： | CEU61A3 |
| 英文描述： | 30V N Channel MOS |
| 中文描述： | 30V的?頻道馬鞍山 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 44K |
| 代理商： | CEU61A3 |
Parameter
Symbol
Condition
Min
Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is = 26A
1.3
0.9
V
a
Notes
a.Pulse Test:Pulse Width 300
s, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current(A)
C
D
I
D
,
I
D
,
6-64
R
D
,
CED61A3/CEU61A3
2400
2000
1600
1200
800
400
0
5
10
15
20
25
30
Ciss
Coss
Crss
0
0
10
20
30
40
25 C
Tj=125 C
-55 C
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
GS
=10V
6
50
40
30
20
10
01
2
3
4
25 C
Tj=125 C
-55 C
0
1
2
3
4
V
GS
=3V
80
60
40
20
0
V
GS
=10,8,6,5,4V
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