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參數(shù)資料
| 型號： | CEU61A3 |
| 英文描述： | 30V N Channel MOS |
| 中文描述： | 30V的?頻道馬鞍山 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 44K |
| 代理商： | CEU61A3 |
CED61A3/CEU61A3
ELECTRICAL CHARACTERISTICS (T
C
25 C unless otherwise noted)
=
Parameter
Symbol
Condition
Min Typ
Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=
0V, I
D=
250
μ
A
30
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
30V, V
GS
=
0V
1
Gate-Body Leakage
ON CHARACTERISTICS
a
I
GSS
V
GS
=
20V, V
DS
=
0V
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
=
V
GS
, I
D
250
μ
A
1
3
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=20A
11
13.5
m
m
V
GS
=4.5V, I
D
= 18A
16.5
20
On-State Drain Current
I
D(ON)
g
V
DS
= 10V, V
GS
= 10V
40
34
A
S
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
FS
V
DS
=10V, I
D
=26A
b
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
1200
P
F
480
P
F
P
F
130
b
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 15V,
I
D
= 40A,
V
GS
= 10V
R
GEN
=24
18
30
ns
ns
ns
ns
25
50
45
75
90
130
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
nC
nC
nC
C
Fall Time
6-63
4
19
5
9
23
V
DS
= 15V,I
D
= 40A
V
GS
= 5V
6
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