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參數(shù)資料
| 型號(hào)： | CEU6060R |
| 廠商： | Chino-Excel Technology Corp. |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)模式的邏輯電平場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 42K |
| 代理商： | CEU6060R |
CED6060R/CEU6060R
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Notes
a.Pulse Test:PulseWidth 300
s, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
6
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
I
D
,
I
D
,
DYNAMIC CHARACTERISTICS
Input Capacitance
b
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=25V, V
GS
= 0V
f =1.0MH
Z
1178
P
F
428
P
F
P
F
95
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is =24A
0.9
1.3
V
b
6-44
-55 C
40
30
20
10
0
2
3
4
5
6
7
8
25 C
T
J
=125 C
40
35
30
25
20
15
10
5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
=10,8,7V
6V
V
GS
=5V
4V
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| CEU6186 | 制造商:CET 制造商全稱(chēng):Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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