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參數資料
| 型號： | CEU6060R |
| 廠商： | Chino-Excel Technology Corp. |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強模式的邏輯電平場效應晶體管 |
| 文件頁數： | 2/5頁 |
| 文件大?。?/td> | 42K |
| 代理商： | CEU6060R |
CED6060R/CEU6060R
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
250
μ
A
=
60
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
60V, V
GS
0V
=
V
GS
=
=
25
Gate-Body Leakage
ON CHARACTERISTICS
a
Gate Threshold Voltage
I
GSS
20V, V
DS
=0V
100
nA
V
GS(th)
V
DS
V
GS
, I
D
= 250
μ
A
=
2
4
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 24A
25
m
On-State Drain Current
I
D(ON)
g
V
GS
= 10V, V
DS
= 10V
60
20
A
S
Forward Transconductance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
FS
V
DS
=10V, I
D
=24A
b
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 30V,
I
D
= 30A,
V
GS
= 10V,
R
GEN
= 7.5
15
20
ns
ns
ns
ns
250
300
45
60
130
150
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=48V, I
D
= 30A,
V
GS
=10V
36
43
nC
nC
nC
9
19
Fall Time
6
DRAIN-SOURCE AVALANCHE RATING
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source
Avalanche Current
a
E
AS
I
AS
V
DD
25V,
=
R
G
25
L 25
μ
H
=
200
30
A
mJ
6-43
=
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相關代理商/技術參數 |
參數描述 |
|---|---|
| CEU6186 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEU61A2 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEU61A3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:30V N Channel MOS |
| CEU62A2 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEU62A3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:30V N Channel MOS |
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