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參數(shù)資料
| 型號： | CES2301 |
| 英文描述： | -20V P Channel MOS |
| 中文描述： | - 20V的P通道馬鞍山 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 52K |
| 代理商： | CES2301 |
CES2301
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=-250
μ
A
-20
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
=-16V, V
GS
=0V
-1
Gate-Body Leakage
ON CHARACTERISTICS
b
I
GSS
V
GS
= 8V, V
DS
=0V
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
, I
D
= -250
μ
A
-0.45
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=-4.5V, I
D
=-2.8A
130
m
m
V
GS
=-2.5V, I
D
=-2.0A
190
On-State Drain Current
I
D(ON)
g
V
DS
-5V, V
GS
= -4.5V
-6
6.5
A
S
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
FS
V
DS
=-5V, I
D
=- 2.8A
c
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=-6V, V
GS
= 0V
f =1.0MH
Z
447
P
F
124
P
F
P
F
80
SWITCHING CHARACTERISTICS
Turn-On Delay Time
c
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= -6V,
I
D
= -1A,
V
GEN
= - 4.5V,
R
GEN
= 6
5
25
ns
ns
ns
ns
19
60
95
110
65
80
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=-6V, I
D
= -2.8A,
V
GS
=-4.5V
5.4
nC
nC
nC
0.8
1.1
C
Fall Time
7
2
10
95
130
相關PDF資料 |
PDF描述 |
|---|---|
| CES2302 | 20V N Channel MOS |
| CES2303 | -30V P Channel MOS |
| CES2304 | 30V N Channel MOS |
| CEU01N6 | 600V N Channel MOS |
| CED01N6 | 600V N Channel MOS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CES2301_10 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| CES2302 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CES2303 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| CES2304 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:30V N Channel MOS |
| CES2305 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
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