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參數(shù)資料
| 型號： | CEM4410B |
| 英文描述： | 30V N Channel MOS |
| 中文描述： | 30V的?頻道馬鞍山 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 51K |
| 代理商： | CEM4410B |
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
V
G
g
F
,
B
D
,
D
I
I
DS
, Drain-Source Current (A)
Figure 7. Transconductance Variation
with Drain Current
Figure 9. Gate Charge
Qg, Total Gate Charge (nC)
Figure 10. Maximum Safe
Operating Area
V
DS
, Drain-Source Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V
SD
, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
I
D
,
CEM4410B
5-5
5
V
G
,
10
8
6
4
2
0
0
15
30
45
60
V
DS
=15V
I
D
=10A
1.30
1.20
1.10
1.00
0.90
0.80
0.70
0.60
-50
-25
0
25
50
75
100 125 150
V
DS
=V
GS
I
D
=250
A
-50
-25
0
25
50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250
A
10
10
-2
10
10
1
0
-1
10
1
10
-2
10
0
10
-1
10
2
10
2
RDSON Lmt
DC
100ms
1s
10ms
T
A
=25 C
Tj=150 C
Single Pulse
1ms
20
15
10
5
25
0
0
5
10
15
20
V
DS
=15V
50
10
1
0.1
0.4
0.6
0.8
1.0
1.2
1.4
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