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參數(shù)資料
| 型號： | CEM4410B |
| 英文描述： | 30V N Channel MOS |
| 中文描述： | 30V的?頻道馬鞍山 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 51K |
| 代理商： | CEM4410B |
CEM4410B
Parameter
Symbol
Condition
Min Typ
Max Unit
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
C
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is = 2.3A
0.75
1.2
V
b
Notes
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:PulseWidth 300
s, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
30
V
GS
=10,8,6,5,4V
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
C
I
D
,
I
D
,
5-4
5
Figure 4. On-Resistance Variation with
Temperature
T
J
, Junction Temperature( C)
-55 C
25 C
50
40
30
20
10
0
1
2
3
4
Tj=125 C
-50 -25
0
25
50
75
100 125 150
1.80
1.60
1.40
1.20
1.00
0.80
0.60
V
GS
=10V
I
D
=10A
25
20
15
10
5
0
0
0.5
1.0
1.5
2.0
V
GS
=3V
0
5
10
15
20
25
30
Ciss
Coss
Crss
3000
2500
2000
1500
1000
500
0
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